公开(公告)号：US20170229478A1

公开(公告)日：2017-08-10

申请号：US15496015

申请日：2017-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Raheel AZMAT ,  RWIK SENGUPTA ,  CHULHONG PARK ,  KWANYOUNG CHUN

IPC: H01L27/118 ,  H01L29/06 ,  H01L23/535

CPC classification number: H01L27/11807 ,  H01L23/535 ,  H01L23/5384 ,  H01L27/0207 ,  H01L29/0649 ,  H01L2924/0002 ,  H03K19/1736 ,  H01L2924/00

Abstract: Provided is a semiconductor device including a substrate with a plurality of logic cells, transistors provided in the plurality of logic cells, contact plugs connected to electrodes of the transistors, first via plugs in contact with top surfaces of the contact plugs, and first wires in contact with top surfaces of the first via plugs. The first wires may include a common conductive line connected to the plurality of logic cells through the contact plugs, and all of the first wires may be shaped like a straight line extending parallel to a specific direction.

公开(公告)号：US20150179646A1

公开(公告)日：2015-06-25

申请号：US14504075

申请日：2014-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Raheel AZMAT ,  RWIK SENGUPTA ,  CHULHONG PARK ,  KWANYOUNG CHUN

IPC: H01L27/092

CPC classification number: H01L27/092 ,  H01L21/823828 ,  H01L21/823871 ,  H01L27/0207

Abstract: A semiconductor device includes a substrate including PMOSFET and NMOSFET regions. First and second gate electrodes are provided on the PMOSFET region, and third and fourth gate electrodes are provided on the NMOSFET region. A connection contact is provided to connect the second gate electrode with the third gate electrode, and a connection line is provided on the connection contact to cross the connection contact and connect the first gate electrode to the fourth gate electrode.

Abstract translation: 半导体器件包括包括PMOSFET和NMOSFET区域的衬底。 第一和第二栅电极设置在PMOSFET区上，第三和第四栅电极设置在NMOSFET区上。 提供连接触点以连接第二栅电极和第三栅电极，并且连接线设置在连接触头上以与连接触头交叉，并将第一栅电极连接到第四栅电极。