公开(公告)号：US20180122922A1

公开(公告)日：2018-05-03

申请号：US15800242

申请日：2017-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEOKHOON KIM ,  WOO BIN SONG ,  SUNJUNG KIM ,  JinBum KIM ,  SANGMOON LEE ,  SEUNG HUN LEE ,  DONGSUK SHIN

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L21/762 ,  H01L23/31

CPC classification number: H01L29/66795 ,  H01L21/76224 ,  H01L23/3171 ,  H01L29/16 ,  H01L29/20 ,  H01L29/267 ,  H01L29/42364 ,  H01L29/785 ,  H01L29/7851

Abstract: Disclosed is a semiconductor device. The semiconductor device comprises a fin structure on a substrate, device isolation patterns provided on the substrate and disposed on opposite sides of the fin structure, a gate electrode running across the fin structure and the device isolation patterns, a gate dielectric pattern between the gate electrode and the fin structure and between the gate electrode and the device isolation patterns, and a capping layer between the substrate and the device isolation patterns and between the fin structure and the device isolation patterns. The capping layer has a thickness greater than a thickness of the gate dielectric pattern.