公开(公告)号：US20170365716A1

公开(公告)日：2017-12-21

申请号：US15694150

申请日：2017-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Yup Chung ,  Hee-Soo Kang ,  Hee-Don Jeong ,  Se-Wan Park

IPC: H01L29/78 ,  H01L27/088

CPC classification number: H01L29/7848 ,  H01L27/0886 ,  H01L29/785

Abstract: A semiconductor device includes a first multi-channel active pattern, a field insulation layer disposed on the first multi-channel active pattern and including a first region and a second region, the first region having a top surface protruding from a top surface of the second region to a top surface of the first multi-channel active pattern, a first gate electrode crossing the first multi-channel active pattern, the first gate electrode being disposed on the field insulation layer, and a first source or drain disposed between the first gate electrode and the first region of the field insulation layer and including a first facet, the first facet being disposed adjacent to the first region of the field insulation layer at a point lower than the top surface of the first multi-channel active pattern.