公开(公告)号：US20140332883A1

公开(公告)日：2014-11-13

申请号：US14089274

申请日：2013-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-Kyoung Kwon ,  Hee-Soo Kang ,  Han-Gu Kim ,  Woo-Jin Seo ,  Ki-Tae Lee ,  Jae-Gon Lee ,  Chan-Hee Jeon

IPC: H01L27/088

CPC classification number: H01L27/0886 ,  H01L27/0266 ,  H01L27/1211

Abstract: A fin-shaped active region is defined on a substrate. First and second gate electrodes crossing the fin-shaped active region are arranged. A dummy gate electrode is formed between the first and second gate electrodes. A first drain region is formed between the first gate electrode and the dummy gate electrode. A second drain region is formed between the dummy gate electrode and the second gate electrode. A source region facing the second drain region is formed. A first drain plug relatively close to the dummy gate electrode, relatively far from the second gate electrode, and connected to the second drain region is formed. The second gate electrode is arranged between the second drain region and the source region. Each of the first and second gate electrodes covers a side surface of the fin-shaped active region.

Abstract translation: 鳍状有源区限定在基底上。 布置了与鳍状有源区交叉的第一和第二栅电极。 在第一和第二栅电极之间形成虚拟栅电极。 在第一栅电极和伪栅电极之间形成第一漏区。 在虚拟栅极电极和第二栅极电极之间形成第二漏极区域。 形成面向第二漏极区域的源极区域。 形成相对靠近第二栅电极并与第二漏极区连接的虚拟栅电极的第一漏极插头。 第二栅极布置在第二漏极区域和源极区域之间。 第一和第二栅电极中的每一个覆盖鳍状有源区的侧表面。

公开(公告)号：US20240213317A1

公开(公告)日：2024-06-27

申请号：US18596461

申请日：2024-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu MAEDA ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC: H01L29/06 ,  B82Y10/00 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/088 ,  H01L27/12 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/417 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78

CPC classification number: H01L29/0692 ,  B82Y10/00 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/775

Abstract: A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

公开(公告)号：US20210066454A1

公开(公告)日：2021-03-04

申请号：US17098412

申请日：2020-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  B82Y10/00 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/12 ,  H01L27/088 ,  H01L29/10 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/49 ,  H01L29/51

Abstract: A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

公开(公告)号：US10002943B2

公开(公告)日：2018-06-19

申请号：US15164246

申请日：2016-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo-Hun Hong ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Sang-Pil Sim ,  Hee-Don Jung

IPC: H01L29/78 ,  H01L29/66 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/165

CPC classification number: H01L29/66545 ,  H01L21/762 ,  H01L21/76229 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.

公开(公告)号：US09299811B2

公开(公告)日：2016-03-29

申请号：US14519771

申请日：2014-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook-Je Kim ,  Jae-Yup Chung ,  Jong-Seo Hong ,  Cheol Kim ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Hee-Don Jeong ,  Soo-Hun Hong ,  Sang-Bom Kang ,  Myeong-Cheol Kim ,  Young-Su Chung

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/165

CPC classification number: H01L29/66795 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: Semiconductor devices may include first and second fins that protrude from a substrate, extend in a first direction, and are separated from each other in the first direction. Semiconductor devices may also include a field insulating layer that is disposed between the first and second fins to extend in a second direction intersecting the first direction, an etch-stop layer pattern that is formed on the field insulating layer and a dummy gate structure that is formed on the etch-stop layer pattern.

Abstract translation: 半导体器件可以包括从基板突出的第一和第二鳍片，沿第一方向延伸，并且在第一方向上彼此分离。 半导体器件还可以包括场绝缘层，其设置在第一和第二鳍之间，沿与第一方向相交的第二方向延伸，形成在场绝缘层上的蚀刻停止层图案和伪栅极结构， 形成在蚀刻停止层图案上。

公开(公告)号：US20150147860A1

公开(公告)日：2015-05-28

申请号：US14519771

申请日：2014-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook-Je Kim ,  Jae-Yup Chung ,  Jong-Seo Hong ,  Cheol Kim ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Hee-Don Jeong ,  Soo-Hun Hong ,  Sang-Bom Kang ,  Myeong-Cheol Kim ,  Young-Su Chung

IPC: H01L29/66

CPC classification number: H01L29/66795 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: Semiconductor devices may include first and second fins that protrude from a substrate, extend in a first direction, and are separated from each other in the first direction. Semiconductor devices may also include a field insulating layer that is disposed between the first and second fins to extend in a second direction intersecting the first direction, an etch-stop layer pattern that is formed on the field insulating layer and a dummy gate structure that is formed on the etch-stop layer pattern.

Abstract translation: 半导体器件可以包括从基板突出的第一和第二鳍片，沿第一方向延伸，并且在第一方向上彼此分离。 半导体器件还可以包括场绝缘层，其设置在第一和第二鳍之间，沿与第一方向相交的第二方向延伸，形成在场绝缘层上的蚀刻停止层图案和伪栅极结构， 形成在蚀刻停止层图案上。

公开(公告)号：US20150035061A1

公开(公告)日：2015-02-05

申请号：US14262230

申请日：2014-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Seop Yoon ,  Hee-Soo Kang ,  Jong-Wook Lee ,  Soon Cho

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: Provided are a multi-gate transistor device and a method for fabricating the same. The method for fabricating the multi-gate transistor device includes forming first and second fins shaped to protrude on a substrate and aligned and extending in a first direction and a trench separating the first and second fins from each other in the first direction between the first and second fins, performing ion implantation of impurities on sidewalls of the trench, forming a field dielectric film filling the trench, forming a recess in the first fin not exposing the field dielectric film, and growing an epitaxial layer in the recess.

Abstract translation: 提供一种多栅极晶体管器件及其制造方法。 制造多栅极晶体管器件的方法包括：形成第一和第二鳍片，其形状突出在基底上并且在第一方向上对准和延伸;以及沟槽，其将第一和第二鳍片沿着第一方向彼此分开， 第二鳍片，在沟槽的侧壁上执行杂质的离子注入，形成填充沟槽的场电介质膜，在第一鳍片中形成不露出场介电膜的凹槽，以及在凹槽中生长外延层。

公开(公告)号：US11955517B2

公开(公告)日：2024-04-09

申请号：US17098412

申请日：2020-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC: H01L21/8234 ,  B82Y10/00 ,  H01L21/84 ,  H01L27/088 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/417 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/775

CPC classification number: H01L29/0692 ,  B82Y10/00 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/775

Abstract: A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

公开(公告)号：US10861934B2

公开(公告)日：2020-12-08

申请号：US16398719

申请日：2019-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  B82Y10/00 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/12 ,  H01L27/088 ,  H01L29/10 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/49 ,  H01L29/51 ,  H01L29/775

Abstract: A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

公开(公告)号：US20190259836A1

公开(公告)日：2019-08-22

申请号：US16398719

申请日：2019-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/417 ,  H01L29/49 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/10 ,  H01L21/84 ,  H01L21/8234 ,  B82Y10/00 ,  H01L27/12 ,  H01L27/088 ,  H01L29/51 ,  H01L29/66

Abstract: A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.