公开(公告)号：US10032886B2

公开(公告)日：2018-07-24

申请号：US15170230

申请日：2016-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Yup Chung ,  Hyun-Jo Kim ,  Seong-Yul Park ,  Se-Wan Park ,  Jong-Mil Youn ,  Jeong-Hyo Lee ,  Hwa-Sung Rhee ,  Hee-Don Jeong ,  Ji-Yong Ha

IPC: H01L21/02 ,  H01L29/66 ,  H01L27/092 ,  H01L29/08 ,  H01L29/78 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/165

Abstract: A semiconductor device includes a fin-type pattern including a first short side and a second short side opposed to each other, a first trench in contact with the first short side, a second trench in contact with the second short side, a first field insulating film in the first trench, the first field insulating film including a first portion and a second portion arranged sequentially from the first short side, and a height of the first portion being different from a height of the second portion, a second field insulating film in the second trench, and a first dummy gate on the first portion of the first field insulating film.

公开(公告)号：US20200219875A1

公开(公告)日：2020-07-09

申请号：US16820853

申请日：2020-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Myung-Yoon Um

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device -is provided. The semiconductor device includes a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film and includes a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern, wherein a height from the substrate to a lowest part of the first portion is different from a height from the substrate to a lowest part of the second portion.

公开(公告)号：US20190081043A1

公开(公告)日：2019-03-14

申请号：US16189296

申请日：2018-11-13

Applicant: Samsung Electronics Co., Ltd

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Myung-Yoon Um

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/11

Abstract: A semiconductor device is provided. The semiconductor device includes a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film and includes a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern, wherein a height from the substrate to a lowest part of the first portion is different from a height from the substrate to a lowest part of the second portion.

公开(公告)号：US10199377B2

公开(公告)日：2019-02-05

申请号：US15461934

申请日：2017-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Bo-Cheol Jeong

IPC: H01L29/06 ,  H01L29/78 ,  H01L27/088 ,  H01L21/762 ,  H01L21/311 ,  H01L21/8234

Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

公开(公告)号：US10692864B2

公开(公告)日：2020-06-23

申请号：US16233301

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Bo-Cheol Jeong

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

公开(公告)号：US09859398B2

公开(公告)日：2018-01-02

申请号：US15438868

申请日：2017-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-Wan Park ,  Seung-Woo Do ,  In-Won Park ,  Sug-Hyun Sung

IPC: H01L29/66 ,  H01L21/306 ,  H01L29/417 ,  H01L21/762 ,  H01L21/308 ,  H01L29/78 ,  H01L29/165

CPC classification number: H01L29/66545 ,  H01L21/30604 ,  H01L21/3085 ,  H01L21/76224 ,  H01L29/165 ,  H01L29/41766 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/66818 ,  H01L29/7848 ,  H01L29/785

Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on a substrate, forming a second fin-shaped pattern by removing a part of the upper part of the first fin-shaped pattern, forming a dummy gate electrode intersecting with the second fin-shaped pattern on the second fin-shaped pattern, and forming a third fin-shaped pattern by removing a part of an upper part of the second fin-shaped pattern after forming the dummy gate electrode, wherein a width of the upper part of the second fin-shaped pattern is smaller than a width of the upper part of the first fin-shaped pattern and is greater than a width of an upper portion of the third fin-shaped pattern.

公开(公告)号：US09755074B2

公开(公告)日：2017-09-05

申请号：US14953769

申请日：2015-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Yup Chung ,  Hee-Soo Kang ,  Hee-Don Jeong ,  Se-Wan Park

IPC: H01L29/78 ,  H01L27/088

CPC classification number: H01L29/7848 ,  H01L27/0886 ,  H01L29/785

Abstract: A semiconductor device includes a first multi-channel active pattern, a field insulation layer disposed on the first multi-channel active pattern and including a first region and a second region, the first region having a top surface protruding from a top surface of the second region to a top surface of the first multi-channel active pattern, a first gate electrode crossing the first multi-channel active pattern, the first gate electrode being disposed on the field insulation layer, and a first source or drain disposed between the first gate electrode and the first region of the field insulation layer and including a first facet, the first facet being disposed adjacent to the first region of the field insulation layer at a point lower than the top surface of the first multi-channel active pattern.

公开(公告)号：US10205023B2

公开(公告)日：2019-02-12

申请号：US15694150

申请日：2017-09-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Yup Chung ,  Hee-Soo Kang ,  Hee-Don Jeong ,  Se-Wan Park

IPC: H01L29/78 ,  H01L27/088

Abstract: A semiconductor device includes a first multi-channel active pattern, a field insulation layer disposed on the first multi-channel active pattern and including a first region and a second region, the first region having a top surface protruding from a top surface of the second region to a top surface of the first multi-channel active pattern, a first gate electrode crossing the first multi-channel active pattern, the first gate electrode being disposed on the field insulation layer, and a first source or drain disposed between the first gate electrode and the first region of the field insulation layer and including a first facet, the first facet being disposed adjacent to the first region of the field insulation layer at a point lower than the top surface of the first multi-channel active pattern.

公开(公告)号：US10157917B2

公开(公告)日：2018-12-18

申请号：US14974805

申请日：2015-12-18

Applicant: Samsung Electronics Co., Ltd

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Myung-Yoon Um

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/11

Abstract: A semiconductor device is provided. The semiconductor device may include a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film. The gate electrode may include a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern. A height from the substrate to a lowest part of the first portion may be different than a height from the substrate to a lowest part of the second portion.

公开(公告)号：US09887194B2

公开(公告)日：2018-02-06

申请号：US14989876

申请日：2016-01-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Sug-Hyun Sung ,  Se-Wan Park

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/42376

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a fin which comprises long sides and a first short side, a first trench which is immediately adjacent the first short side of the fin and has a first depth, a second trench which is immediately adjacent the first trench and has a second depth greater than the first depth, a first protrusion structure which protrudes from a bottom of the first trench and extends side by side with the first short side, and a gate which is formed on the first protrusion structure to extend side by side with the first short side.