公开(公告)号：US10367024B2

公开(公告)日：2019-07-30

申请号：US15623635

申请日：2017-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjoo Nah ,  Jung-Chak Ahn ,  Kyung-Ho Lee

IPC: H01L27/146

Abstract: A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.