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    IMAGE SENSORS HAVING REDUCED INTERFERENCE BETWEEN PIXELS
    4.
    发明申请
    IMAGE SENSORS HAVING REDUCED INTERFERENCE BETWEEN PIXELS 有权
    具有像素之间降低干扰的图像传感器

    公开(公告)号：US20150333091A1

    公开(公告)日：2015-11-19

    申请号：US14595336

    申请日：2015-01-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young-Sun Oh ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Kyung-Ho Lee ,  Jun-Suk Lee

    IPC: H01L27/146

    CPC classification number: H01L27/14641 ,  H01L27/14603 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/37457

    Abstract: An image sensor includes first pixels and a first source follower transistor, which are disposed adjacent to each other in a first pixel area in a column direction, and second pixels and a second source follower transistor, which are formed in a second pixel area adjacent to the first pixel area in a row direction by the same number of the first pixels, wherein when the first pixels share the first source follower transistor and the second pixels share the second source follower transistor, while pixels selected from the same row are activated, the first source follower transistor and the second source follower transistor being activated are disposed so that locations thereof have a diagonal symmetry.

    Abstract translation: 图像传感器包括在列方向上的第一像素区域中彼此相邻布置的第一像素和第一源极跟随器晶体管，以及第二像素和第二源极跟随器晶体管，其形成在与第二像素区域相邻的第二像素区域中 第一像素区域在行方向上具有相同数量的第一像素，其中当第一像素共享第一源极跟随器晶体管并且第二像素共享第二源极跟随器晶体管时，当从相同行选择的像素被激活时， 第一源极跟随器晶体管和第二源极跟随器晶体管被激活，使得它们的位置具有对角对称性。

    CMOS Image Sensors Including Vertical Transistor and Methods of Fabricating the Same
    5.
    发明申请
    CMOS Image Sensors Including Vertical Transistor and Methods of Fabricating the Same 有权
    包括垂直晶体管的CMOS图像传感器及其制造方法

    公开(公告)号：US20150243693A1

    公开(公告)日：2015-08-27

    申请号：US14340719

    申请日：2014-07-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Jung-Chak Ahn ,  Hee-Geun Jeong

    IPC: H01L27/146 ,  H01L29/778

    CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02016

    Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

    Abstract translation: 提供了互补金属氧化物半导体（CMOS）图像传感器。 CMOS图像传感器可以包括具有限定和分割第一有源区和第二有源区的第一器件隔离层的衬底，设置在衬底中的光电二极管，并且可以被配置为与第一器件隔离层垂直重叠，传输栅电极 可以设置在第一有源区中并且可以被配置为垂直地重叠光电二极管，并且浮动扩散区可以在第一有源区中。 传输栅电极可以埋在衬底中。

    Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor
    6.
    发明授权
    Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor 有权

    公开(公告)号：US11152419B2

    公开(公告)日：2021-10-19

    申请号：US16560347

    申请日：2019-09-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jung-Chak Ahn

    IPC: H01L27/146

    Abstract: An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices.

    Semiconductor image sensors having channel stop regions and methods of fabricating the same
    7.
    发明授权
    Semiconductor image sensors having channel stop regions and methods of fabricating the same 有权

    公开(公告)号：US09711557B2

    公开(公告)日：2017-07-18

    申请号：US14641621

    申请日：2015-03-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seungjoo Nah ,  Jung-Chak Ahn ,  Kyung-Ho Lee

    IPC: H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14689

    Abstract: A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.

    Unit pixel of image sensor and image sensor including the same
    8.
    发明授权
    Unit pixel of image sensor and image sensor including the same 有权
    图像传感器和图像传感器的单位像素包括相同

    公开(公告)号：US09041071B2

    公开(公告)日：2015-05-26

    申请号：US13738134

    申请日：2013-01-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jung-Chak Ahn

    IPC: H01L27/148 ,  H01L31/062 ,  H04N3/14 ,  H01L31/0232 ,  H01L31/09 ,  H01L27/146

    CPC classification number: H01L27/14612 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L31/0232 ,  H01L31/09

    Abstract: A unit pixel of an image sensor includes a photoelectric conversion region, an isolation region, a floating diffusion region and a transfer gate. The photoelectric conversion region is formed in a semiconductor substrate. The isolation region surrounds the photoelectric conversion region, extends substantially vertically with respect to a first surface of the semiconductor substrate, and crosses the incident side of the photoelectric conversion region so as to block leakage light and diffusion carriers. The floating diffusion region is disposed in the semiconductor substrate above the photoelectric conversion region. The transfer gate is disposed adjacent to the photoelectric conversion region and the floating diffusion region, extends substantially vertically with respect to the first surface of the semiconductor substrate, and transmits the photo-charges from the photoelectric conversion region to the floating diffusion region.

    Abstract translation: 图像传感器的单位像素包括光电转换区域，隔离区域，浮动扩散区域和传输门极。 光电转换区域形成在半导体衬底中。 隔离区域围绕光电转换区域，相对于半导体衬底的第一表面基本垂直地延伸，并且与光电转换区域的入射侧交叉，以阻挡泄漏光和扩散载流子。 浮动扩散区域设置在光电转换区域上方的半导体衬底中。 传输门与光电转换区和浮动扩散区相邻设置，相对于半导体衬底的第一表面基本垂直地延伸，并将光电荷从光电转换区传输到浮动扩散区。

    Method of manufacturing image sensor for reducing crosstalk characteristic
    9.
    再颁专利
    Method of manufacturing image sensor for reducing crosstalk characteristic 有权

    公开(公告)号：USRE49209E1

    公开(公告)日：2022-09-13

    申请号：US16702835

    申请日：2019-12-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jung-Chak Ahn ,  Bum-Suk Kim

    IPC: H01L27/146

    Abstract: An image sensor includes a plurality of photoelectric detectors, a plurality of color filters, and at least one pixel isolation region between adjacent ones of the photoelectric detectors. The color filters include a white color filter, and the color filters correspond to respective ones of the photoelectric detectors. The at least one pixel isolation region serves to physically and at least partially optically separate the photoelectric detectors from one another.

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