公开(公告)号：US11694961B2

公开(公告)日：2023-07-04

申请号：US17208512

申请日：2021-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yanggyoo Jung ,  Jinhyun Kang ,  Sungeun Kim ,  Sangmin Yong ,  Seungkwan Ryu

IPC: H01L23/538 ,  H01L23/498 ,  H01L25/065 ,  H01L23/00

CPC classification number: H01L23/5383 ,  H01L23/49816 ,  H01L24/16 ,  H01L24/73 ,  H01L25/0655 ,  H01L24/32 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/1517

Abstract: A semiconductor package includes a package substrate. An interposer is disposed on the package substrate. The interposer in a semiconductor substrate, a wiring layer disposed on an upper surface of the semiconductor substrate and having a plurality of wirings therein, redistribution wiring pads disposed on the wiring layer and electrically connected to the wirings, bonding pads disposed on the redistribution wiring pads, and an insulation layer pattern disposed on the wiring layer and exposing at least a portion of the bonding pad, and first and second semiconductor devices disposed on the interposer. The first and second semiconductor devices are spaced apart from each other and are electrically connected to each other by at least one of the wirings.

公开(公告)号：US20230052195A1

公开(公告)日：2023-02-16

申请号：US17971321

申请日：2022-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Ungcheon Kim ,  Sungwoo Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L25/18 ,  H01L21/48 ,  H01L23/538

Abstract: Provided is an interposer for a semiconductor package, the interposer including an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface, a first through-electrode structure and a second through-electrode structure each passing through the interposer substrate and protruding from the first main surface, a connection terminal structure contacting both the first through-electrode structure and the second through-electrode structure, and a photosensitive polymer layer arranged between the connection terminal structure and the interposer substrate, and between the first through-electrode structure and the second through-electrode structure.

公开(公告)号：US20210391265A1

公开(公告)日：2021-12-16

申请号：US17208512

申请日：2021-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Yanggyoo Jung ,  Jinhyun Kang ,  Sungeun Kim ,  Sangmin Yong ,  Seungkwan Ryu

IPC: H01L23/538 ,  H01L23/498 ,  H01L25/065 ,  H01L23/00

Abstract: A semiconductor package includes a package substrate. An interposer is disposed on the package substrate. The interposer in a semiconductor substrate, a wiring layer disposed on an upper surface of the semiconductor substrate and having a plurality of wirings therein, redistribution wiring pads disposed on the wiring layer and electrically connected to the wirings, bonding pads disposed on the redistribution wiring pads, and an insulation layer pattern disposed on the wiring layer and exposing at least a portion of the bonding pad, and first and second semiconductor devices disposed on the interposer. The first and second semiconductor devices are spaced apart from each other and are electrically connected to each other by at least one of the wirings.

公开(公告)号：US20210175161A1

公开(公告)日：2021-06-10

申请号：US17038306

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Ungcheon Kim ,  Sungwoo Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L25/18 ,  H01L21/48 ,  H01L23/538

Abstract: Provided is an interposer for a semiconductor package, the interposer including an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface, a first through-electrode structure and a second through-electrode structure each passing through the interposer substrate and protruding from the first main surface, a connection terminal structure contacting both the first through-electrode structure and the second through-electrode structure, and a photosensitive polymer layer arranged between the connection terminal structure and the interposer substrate, and between the first through-electrode structure and the second through-electrode structure.