公开(公告)号：US20130313512A1

公开(公告)日：2013-11-28

申请号：US13957602

申请日：2013-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee-jun YANG ,  Sun-ae SEO ,  Sung-hoon LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66477 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/1079 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/838 ,  Y10S977/842

Abstract: A graphene electronic device and a method of fabricating the graphene electronic device are provided. The graphene electronic device may include a graphene channel layer formed on a hydrophobic polymer layer, and a passivation layer formed on the graphene channel layer. The hydrophobic polymer layer may prevent or reduce adsorption of impurities to transferred graphene, and a passivation layer may also prevent or reduce adsorption of impurities to a heat-treated graphene channel layer.

Abstract translation: 提供石墨烯电子器件和制造石墨烯电子器件的方法。 石墨烯电子器件可以包括形成在疏水聚合物层上的石墨烯通道层和形成在石墨烯通道层上的钝化层。 疏水性聚合物层可以防止或减少杂质对转移的石墨烯的吸附，并且钝化层也可以防止或减少杂质对经热处理的石墨烯通道层的吸附。