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    RESIN DISPENSER FOR NANO-IMPRINT
    4.
    发明申请
    RESIN DISPENSER FOR NANO-IMPRINT 审中-公开
    用于纳米印刷的树脂分配器

    公开(公告)号：US20150108688A1

    公开(公告)日：2015-04-23

    申请号：US14307753

    申请日：2014-06-18

    Applicant: Samsung Electronics Co., Ltd. ,  Samsung Display Co., Ltd.

    Inventor： Bong-su SHIN ,  Dong-ouk KIM ,  Joon-young PARK ,  Sung-hoon LEE ,  Jae-seung CHUNG ,  Suk-gyu HAHM ,  Dae-young LEE ,  Gug-rae JO

    IPC: B28B7/30 ,  B41J2/14

    CPC classification number: B41F31/02 ,  G03F7/0002

    Abstract: A resin dispenser for nano-imprinting includes a housing including a lower chamber in which a resin is filled, a slit defined in a lower part of the lower chamber and through which the resin is discharged, and an upper chamber in which a pressure-applying fluid is filled, and a membrane separating the lower and upper chambers from each other, and of which an edge is fixed on a middle part of the housing, where the fluid is configured to apply the pressure to the membrane and protrude the membrane toward the slit of the lower chamber.

    Abstract translation: 用于纳米压印的树脂分配器包括壳体，其包括下室，其中填充有树脂，限定在下室的下部并且树脂被排出的狭缝以及其中施加压力的上室 流体被填充，以及将下部和上部腔室彼此分开的膜，并且其中边缘固定在壳体的中间部分上，其中流体构造成将压力施加到膜并将膜突出到 下腔狭缝。

    GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME 有权
    石墨电子器件及其制造方法

    公开(公告)号：US20140225068A1

    公开(公告)日：2014-08-14

    申请号：US14244275

    申请日：2014-04-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyun-jong CHUNG ,  Jin-seong HEO ,  Hee-jun YANG ,  Sun-ae SEO ,  Sung-hoon LEE

    IPC: H01L29/66 ,  H01L29/775

    CPC classification number: H01L29/66477 ,  H01L29/42384 ,  H01L29/775 ,  H01L29/78684

    Abstract: A graphene electronic device includes a graphene channel layer on a substrate, a source electrode on an end portion of the graphene channel layer and a drain electrode on another end portion of the graphene channel layer, a gate oxide on the graphene channel layer and between the source electrode and the drain electrode, and a gate electrode on the gate oxide. The gate oxide has substantially the same shape as the graphene channel layer between the source electrode and the drain electrode.

    Abstract translation: 石墨烯电子器件包括在衬底上的石墨烯通道层，石墨烯通道层的端部上的源电极和在石墨烯通道层的另一端部上的漏电极，石墨烯通道层上的栅极氧化物 源电极和漏电极以及栅极氧化物上的栅电极。 栅极氧化物具有与源电极和漏电极之间的石墨烯沟道层基本相同的形状。

    GRAPHENE SUBSTITUTED WITH BORON AND NITROGEN, METHOD OF FABRICATING THE SAME, AND TRANSISTOR HAVING THE SAME
    7.
    发明申请
    GRAPHENE SUBSTITUTED WITH BORON AND NITROGEN, METHOD OF FABRICATING THE SAME, AND TRANSISTOR HAVING THE SAME 有权
    用硼和氮取代的石墨，其制造方法和具有其的晶体管

    公开(公告)号：US20140131626A1

    公开(公告)日：2014-05-15

    申请号：US14162397

    申请日：2014-01-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung-hoon LEE ,  Sun-ae SEO ,  Yun-sung WOO ,  Hyun-jong CHUNG ,  Jin-seong HEO

    IPC: H01L29/16

    CPC classification number: H01L29/1606 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  H01L29/7781 ,  H01L29/78684

    Abstract: Graphene, a method of fabricating the same, and a transistor having the graphene are provided, the graphene includes a structure of carbon (C) atoms partially substituted with boron (B) atoms and nitrogen (N) atoms. The graphene has a band gap. The graphene substituted with boron and nitrogen may be used as a channel of a field effect transistor. The graphene may be formed by performing chemical vapor deposition (CVD) method using borazine or ammonia borane as a boron nitride (B-N) precursor.

    Abstract translation: 提供石墨烯，其制造方法和具有石墨烯的晶体管，石墨烯包括部分被硼（B）原子和氮（N）原子取代的碳（C）原子的结构。 石墨烯具有带隙。 用硼和氮取代的石墨烯可以用作场效应晶体管的通道。 可以通过使用环硼氮烷或氨硼烷作为氮化硼（B-N）前体进行化学气相沉积（CVD）方法来形成石墨烯。

    MEMORY CARD INDENTIFICATION DEVICE, HOST DEVICE AND MEMORY CARD USING THE SAME
    8.
    发明申请
    MEMORY CARD INDENTIFICATION DEVICE, HOST DEVICE AND MEMORY CARD USING THE SAME 有权
    存储卡识别装置，主机装置和使用其的存储卡

    公开(公告)号：US20150380844A1

    公开(公告)日：2015-12-31

    申请号：US14644673

    申请日：2015-03-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae-bum LEE ,  Seok-heon LEE ,  Sung-hoon LEE

    IPC: H01R12/70 ,  H01R13/66

    CPC classification number: H01R12/7094 ,  G06K7/04

    Abstract: A memory card identification device, a host device using the memory card, and a memory card are provided. The memory card identification device includes: a card socket comprising a single card slot through which at least two kinds of memory cards can be inserted and a target port disposed to be in contact with any one kind of a target memory card based on an external characteristic difference between different kinds of memory cards; and a card type detector configured to determine a type of a memory card inserted in the card socket by using a contact state signal of the target port.

    Abstract translation: 提供存储卡识别装置，使用存储卡的主机装置和存储卡。 存储卡识别装置包括：卡插槽，其包括单个卡槽，可以插入至少两种存储卡，以及基于外部特性设置为与任何一种目标存储卡接触的目标端口 不同种类的存储卡之间的差异; 以及卡型检测器，被配置为通过使用目标端口的接触状态信号来确定插入到卡插槽中的存储卡的类型。

    DISPLAY APPARATUSES AND METHODS OF OPERATING THE SAME
    9.
    发明申请
    DISPLAY APPARATUSES AND METHODS OF OPERATING THE SAME 审中-公开
    显示装置及其操作方法

    公开(公告)号：US20140071367A1

    公开(公告)日：2014-03-13

    申请号：US14082584

    申请日：2013-11-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung-hoon LEE ,  Do-Hyun KIM ,  Sang-wook KIM ,  Chang-jung KIM

    IPC: G02F1/1368

    CPC classification number: G02F1/1368 ,  G09G3/3648 ,  G09G2330/027

    Abstract: Provided are display apparatuses and methods of operating the same. In a display apparatus, a display image may be continuously held for longer than about 10 msec after the power of the display panel is turned off. The display apparatus may indicate a liquid crystal display (LCD) apparatus including an oxide thin film transistor (TFT). Off leakage current of the oxide TFT may be less than about 10−14 A.

    Abstract translation: 提供了显示装置及其操作方法。 在显示装置中，在显示面板的电源关闭之后，显示图像可以连续保持超过约10毫秒。 显示装置可以指示包括氧化物薄膜晶体管（TFT）的液晶显示器（LCD）装置。 氧化物TFT的漏电流可以小于约10-14A。

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