公开(公告)号：US11775203B2

公开(公告)日：2023-10-03

申请号：US17376437

申请日：2021-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngdeok Seo ,  Jinyoung Kim ,  Sehwan Park ,  Dongmin Shin ,  Woohyun Kang ,  Shinho Oh

IPC: G06F3/00 ,  G06F3/06 ,  G06N3/08

CPC classification number: G06F3/0655 ,  G06F3/064 ,  G06F3/0604 ,  G06F3/0679 ,  G06N3/08

Abstract: A method of operating a nonvolatile memory device is provided. The method includes: dividing a memory block of a plurality of memory blocks provided in the nonvolatile memory device into a plurality of retention groups; generating time-difference information including a plurality of erase program interval (EPI) values corresponding to the plurality of retention groups; generating offset information including a plurality of offset values corresponding to differences between a plurality of default read voltages and a plurality of corrected read voltages; generating compensated read voltages corresponding to a read address based on the offset information and the time-difference information; and performing a read operation to read data from the nonvolatile memory device based on the read address and the compensated read voltages.