公开(公告)号：US20170092578A1

公开(公告)日：2017-03-30

申请号：US15375567

申请日：2016-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongmin BAEK ,  Sangho RHA ,  Sanghoon AHN ,  Wookyung YOU ,  Naein LEE

IPC: H01L23/528 ,  H01L23/532

CPC classification number: H01L23/528 ,  H01L21/7682 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices are provided. A semiconductor device includes gaps between conductive patterns. Moreover, the semiconductor device includes a permeable layer on the conductive patterns. Methods of fabricating semiconductor devices are also provided.