公开(公告)号：US20150126012A1

公开(公告)日：2015-05-07

申请号：US14313039

申请日：2014-06-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeong-Jong Jeong ,  Jeong-Yun Lee ,  Shi Li Quan

IPC: H01L29/66 ,  H01L21/28

CPC classification number: H01L29/66545 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848

Abstract: A method of forming a semiconductor device includes forming a gate structure including a polysilicon gate and forming a capping spacer on a side surface of the gate structure to prevent parasitic epitaxial growth on the side surface of the polysilicon gate.

Abstract translation: 一种形成半导体器件的方法包括在栅极结构的侧表面上形成包括多晶硅栅极并形成封盖间隔物的栅极结构，以防止多晶硅栅极的侧表面上的寄生外延生长。