公开(公告)号：US20230083978A1

公开(公告)日：2023-03-16

申请号：US17989206

申请日：2022-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungho YOON ,  Soichiro MIZUSAKI ,  Youngjin CHO

IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate a substrate, a first electrode structure on the substrate, the first electrode structure including first insulating patterns and first electrode patterns, the first insulating patterns alternately stacked with the first electrode patterns, a second electrode pattern on a sidewall of the first electrode structure, and a data storage film on a sidewall of the second electrode pattern. The data storage film has a variable resistance.

公开(公告)号：US20210202840A1

公开(公告)日：2021-07-01

申请号：US16999285

申请日：2020-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seyun KIM ,  Jinhong KIM ,  Soichiro MIZUSAKI ,  Jungho YOON ,  Youngjin CHO

IPC: H01L45/00 ,  H01L27/24

Abstract: A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer and a second layer. The first layer is formed of a first material. The second layer is on the first layer and formed of a second material having a density different from a density of the first material. The first conductive element and a second conductive element are located on the variable resistance layer and spaced apart from each other in order to form a current path in the variable resistance layer. The current path is in a direction perpendicular to a direction in which the first layer and the second layer are stacked.