Tiled display device having uniform brightness
    11.
    发明授权
    Tiled display device having uniform brightness 有权
    具有均匀亮度的平铺显示装置

    公开(公告)号:US08866991B2

    公开(公告)日:2014-10-21

    申请号:US12694043

    申请日:2010-01-26

    CPC分类号: G02F1/13336 G02F1/133615

    摘要: A tiled display device includes a plurality of display devices defining an image display part, the image display part divided into a central portion and an outer edge portion, a support frame tiling the plurality of display devices side by side, and a plurality of light guides, each light guide disposed on each of the display devices, wherein the brightness of an image displayed at the outer edge portion is higher than that of an image disposed at the central portion.

    摘要翻译: 平铺显示装置包括限定图像显示部分的多个显示装置,分割成中心部分和外边缘部分的图像显示部分,并排平铺多个显示装置的支撑框架,以及多个导光板 布置在每个显示装置上的每个光导,其中在外边缘部分显示的图像的亮度高于设置在中心部分的图像的亮度。

    Backlight unit and liquid crystal display device having the same
    12.
    发明授权
    Backlight unit and liquid crystal display device having the same 有权
    背光单元和具有该背光单元的液晶显示装置

    公开(公告)号:US08471980B2

    公开(公告)日:2013-06-25

    申请号:US12559831

    申请日:2009-09-15

    申请人: Min Joo Kim

    发明人: Min Joo Kim

    摘要: A backlight unit with uniform brightness (luminance) is disclosed.The backlight unit includes: a plurality of light sources arranged at a fixed interval; a diffusion plate disposed on the light sources to primarily diffuse light emitted from the light sources; and a diffusion sheet configured to secondarily diffuse the primarily diffused light from the diffusion plate, wherein the surface of the diffusion sheet is divided into first regions not opposite to the light and second regions opposite to the light sources, and the diffusion sheet includes lens pattern portions formed on the second regions.

    摘要翻译: 公开了具有均匀亮度(亮度)的背光单元。 背光单元包括:以固定间隔布置的多个光源; 设置在所述光源上以扩散从所述光源发出的光的漫射板; 以及漫射片,被配置为使来自漫射板的主要漫射光二次扩散,其中扩散片的表面被分成与光不相对的第一区域和与光源相对的第二区域,并且扩散片包括透镜图案 形成在第二区域上的部分。

    Method of manufacturing a liquid crystal display having top gate thin film transistors wherein each gate electrode contacts an auxilliary electrode
    13.
    发明授权
    Method of manufacturing a liquid crystal display having top gate thin film transistors wherein each gate electrode contacts an auxilliary electrode 有权
    制造具有顶栅极薄膜晶体管的液晶显示器的方法,其中每个栅电极接触辅助电极

    公开(公告)号:US08174635B2

    公开(公告)日:2012-05-08

    申请号:US13166455

    申请日:2011-06-22

    IPC分类号: G02F1/136 G02F1/13 H01L51/40

    摘要: An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.

    摘要翻译: 静电放电保护元件,具有该静电放电保护元件的液晶显示器件及其制造方法。 第一ESD有机TFT,第二ESD有机TFT,第三ESD有机TFT各自具有栅电极,源电极和漏电极,其中第一和第二ESD有机TFT的源电极和漏电极以及栅电极 的第三ESD有机TFT电连接。 第一ESD有机TFT的栅电极和源电极电连接到第一阵列线,并且第二ESD有机TFT的栅电极和漏极电连接到第二阵列线。 第三ESD有机TFT的源电极电连接到数据线或栅极线,并且第三ESD有机TFT的漏极电连接到公共电压线。

    METHOD OF MANUFACTURING A LIQUID CRYSTAL DISPLAY HAVING TOP GATE THIN FILM TRANSISTORS WHEREIN EACH GATE ELECTRODE CONTACTS AN AUXILLIARY ELECTRODE
    14.
    发明申请
    METHOD OF MANUFACTURING A LIQUID CRYSTAL DISPLAY HAVING TOP GATE THIN FILM TRANSISTORS WHEREIN EACH GATE ELECTRODE CONTACTS AN AUXILLIARY ELECTRODE 有权
    制造具有每个门电极的顶盖薄膜晶体管的液晶显示方法联系辅助电极

    公开(公告)号:US20110249208A1

    公开(公告)日:2011-10-13

    申请号:US13166455

    申请日:2011-06-22

    IPC分类号: G02F1/1333

    摘要: An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.

    摘要翻译: 静电放电保护元件,具有该静电放电保护元件的液晶显示器件及其制造方法。 第一ESD有机TFT,第二ESD有机TFT,第三ESD有机TFT各自具有栅电极,源电极和漏电极,其中第一和第二ESD有机TFT的源电极和漏电极以及栅电极 的第三ESD有机TFT电连接。 第一ESD有机TFT的栅电极和源电极电连接到第一阵列线,并且第二ESD有机TFT的栅电极和漏极电连接到第二阵列线。 第三ESD有机TFT的源电极电连接到数据线或栅极线,并且第三ESD有机TFT的漏极电连接到公共电压线。

    Organic thin film transistor and method of manufacturing the organic thin film transistor, and display apparatus using the same
    15.
    发明申请
    Organic thin film transistor and method of manufacturing the organic thin film transistor, and display apparatus using the same 有权
    有机薄膜晶体管及其制造方法以及使用其的显示装置

    公开(公告)号:US20070242180A1

    公开(公告)日:2007-10-18

    申请号:US11638384

    申请日:2006-12-14

    IPC分类号: G02F1/136

    摘要: Provided are an organic semiconductor structure and a method of manufacturing the same, an organic thin film transistor (OTFT) using the organic semiconductor structure and a method of manufacturing the OTFT, and a display apparatus using the same. The OTFT includes: an oxide layer formed on a base substrate; a source electrode on the oxide layer, wherein the source electrode includes a first source electrode portion and a second source electrode portion; a drain electrode on the oxide layer, wherein the drain electrode includes a first drain electrode portion and a second drain electrode portion; an organic layer pattern having an opening that exposes the first source electrode portion and the first drain electrode portion; an organic semiconductor pattern electrically connected to the first source electrode portion and the first drain electrode portion through the opening, wherein the organic semiconductor pattern has a conductive or an insulating property depending on an applied electric field in a location; a gate insulating layer covering the organic semiconductor pattern; and a gate electrode formed on the gate insulating layer corresponding to the organic semiconductor pattern.

    摘要翻译: 提供一种有机半导体结构及其制造方法,使用有机半导体结构的有机薄膜晶体管(OTFT)和制造OTFT的方法以及使用其的显示装置。 OTFT包括:形成在基底基板上的氧化物层; 在所述氧化物层上的源电极,其中所述源电极包括第一源电极部分和第二源电极部分; 在所述氧化物层上的漏电极,其中所述漏电极包括第一漏电极部分和第二漏电极部分; 有机层图案,具有露出第一源电极部分和第一漏电极部分的开口; 通过所述开口与所述第一源电极部分和所述第一漏电极部分电连接的有机半导体图案,其中所述有机半导体图案具有取决于所施加的电场的导电或绝缘性能; 覆盖有机半导体图案的栅极绝缘层; 以及形成在对应于有机半导体图案的栅极绝缘层上的栅电极。

    Organic thin film transistor and method of manufacturing the organic thin film transistor, and display apparatus using the same
    18.
    发明授权
    Organic thin film transistor and method of manufacturing the organic thin film transistor, and display apparatus using the same 有权
    有机薄膜晶体管及其制造方法以及使用其的显示装置

    公开(公告)号:US08208086B2

    公开(公告)日:2012-06-26

    申请号:US12827612

    申请日:2010-06-30

    IPC分类号: G02F1/136 G02F1/1333

    摘要: Provided are an organic semiconductor structure and a method of manufacturing the same, an organic thin film transistor (OTFT) using the organic semiconductor structure and a method of manufacturing the OTFT, and a display apparatus using the same. The OTFT includes: an oxide layer formed on a base substrate; a source electrode on the oxide layer, wherein the source electrode includes a first source electrode portion and a second source electrode portion; a drain electrode on the oxide layer, wherein the drain electrode includes a first drain electrode portion and a second drain electrode portion; an organic layer pattern having an opening that exposes the first source electrode portion and the first drain electrode portion; an organic semiconductor pattern electrically connected to the first source electrode portion and the first drain electrode portion through the opening, wherein the organic semiconductor pattern has a conductive or an insulating property depending on an applied electric field in a location; a gate insulating layer covering the organic semiconductor pattern; and a gate electrode formed on the gate insulating layer corresponding to the organic semiconductor pattern.

    摘要翻译: 提供一种有机半导体结构及其制造方法,使用有机半导体结构的有机薄膜晶体管(OTFT)和制造OTFT的方法以及使用其的显示装置。 OTFT包括:形成在基底基板上的氧化物层; 在所述氧化物层上的源电极,其中所述源电极包括第一源电极部分和第二源电极部分; 在所述氧化物层上的漏电极,其中所述漏电极包括第一漏电极部分和第二漏电极部分; 有机层图案,具有露出第一源电极部分和第一漏电极部分的开口; 通过所述开口与所述第一源电极部分和所述第一漏电极部分电连接的有机半导体图案,其中所述有机半导体图案具有取决于所施加的电场的导电或绝缘性能; 覆盖有机半导体图案的栅极绝缘层; 以及形成在对应于有机半导体图案的栅极绝缘层上的栅电极。

    Method of manufacturing a liquid crystal display having top gate thin film transistors wherein each gate electrode contacts an auxiliary electrode
    19.
    发明授权
    Method of manufacturing a liquid crystal display having top gate thin film transistors wherein each gate electrode contacts an auxiliary electrode 有权
    制造具有顶栅极薄膜晶体管的液晶显示器的方法,其中每个栅电极接触辅助电极

    公开(公告)号:US07986382B2

    公开(公告)日:2011-07-26

    申请号:US12958860

    申请日:2010-12-02

    IPC分类号: G02F1/136 G02F1/13 H01L51/40

    摘要: An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.

    摘要翻译: 静电放电保护元件,具有该静电放电保护元件的液晶显示器件及其制造方法。 第一ESD有机TFT,第二ESD有机TFT,第三ESD有机TFT各自具有栅电极,源电极和漏电极,其中第一和第二ESD有机TFT的源电极和漏电极以及栅电极 的第三ESD有机TFT电连接。 第一ESD有机TFT的栅电极和源电极电连接到第一阵列线,并且第二ESD有机TFT的栅电极和漏极电连接到第二阵列线。 第三ESD有机TFT的源电极电连接到数据线或栅极线,并且第三ESD有机TFT的漏极电连接到公共电压线。