公开(公告)号：US20190198785A1

公开(公告)日：2019-06-27

申请号：US16329947

申请日：2017-09-01

申请人： The Board of Trustees of the Leland Stanford Junior University

发明人： Nicholas Alexander Melosh ,  Matt R. Angle ,  Mina-elraheb S. Hanna ,  Yifan Kong

IPC分类号： H01L51/05 ,  G03F7/40 ,  G03F7/42 ,  H01L51/00 ,  H01L51/10

CPC分类号： H01L51/0558 ,  G03F7/40 ,  G03F7/422 ,  H01L51/0016 ,  H01L51/0018 ,  H01L51/0037 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/102

摘要： Methods for patterning highly sensitive materials, such as organic materials, organic semiconductors, biomolecular materials, and the like, with photolithographic resolution are disclosed. In some embodiments, a germanium mask (304) is formed on the surface of the sensitive material (302), thereby protecting it from subsequent processes that employ harsh chemicals that would otherwise destroy the sensitive material (302). A microlithography mask (306) is patterned on the germanium mask layer (304), after which the germanium exposed by the microlithography mask (306) is removed by dissolving it in water. After transferring the pattern of the germanium mask (304) into the sensitive material (302), the germanium and microlithography masks (304, 306) are completely removed by immersing the substrate in water, which dissolves the remaining germanium and lifts off the microlithography mask material. As a result, the only chemical to which the sensitive material (302) is exposed during the patterning process is water, thereby mitigating or avoiding damage to the material (302).

公开(公告)号：US20180366518A1

公开(公告)日：2018-12-20

申请号：US16111155

申请日：2018-08-23

申请人： E Ink Holdings Inc.

发明人： Kuan-Yi LIN ,  Yu-Wen CHEN ,  Yu-Chieh HUNG ,  Chun-Yu LU ,  Wen-Chung TANG ,  Po-Wei CHEN ,  Yu-Lin HSU

IPC分类号： H01L27/28 ,  H01L51/05 ,  H01L51/10 ,  H01L27/12 ,  H01L51/00 ,  H01L51/52 ,  H05K1/00

CPC分类号： H01L27/283 ,  H01L27/124 ,  H01L51/0097 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/107 ,  H01L51/5253 ,  H05K1/00 ,  H05K1/036 ,  H05K1/113 ,  H05K1/189 ,  H05K3/423 ,  H05K2201/0179 ,  H05K2201/0338 ,  H05K2201/10128 ,  Y02E10/549

摘要： A flexible display device includes a flexible substrate, an inorganic barrier layer, a metal layer, an organic buffer layer, and an insulating layer. The inorganic barrier layer is located on the flexible substrate. The metal layer is located on the inorganic barrier layer and in contact with the inorganic barrier layer. The organic buffer layer covers the inorganic barrier layer and the metal layer, and has at least one conductive via connected to the metal layer. The insulating layer is located on the organic buffer layer.

公开(公告)号：US10079354B2

公开(公告)日：2018-09-18

申请号：US15479468

申请日：2017-04-05

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu ,  Zhen Zhang

IPC分类号： H01L27/28 ,  H01L51/05 ,  H01L51/00 ,  B82Y30/00 ,  H01L51/10 ,  B82Y10/00 ,  B82Y40/00

CPC分类号： H01L51/0541 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L27/283 ,  H01L51/0048 ,  H01L51/0525 ,  H01L51/055 ,  H01L51/0558 ,  H01L51/0566 ,  H01L51/057 ,  H01L51/105 ,  H01L2251/303 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/938

摘要： A transistor device includes an array of fin structures arranged on a substrate, each of the fin structures being vertically alternating stacks of a first isoelectric point material having a first isoelectric point and a second isoelectric point material having a second isoelectric point that is different than the first isoelectric point; one or more carbon nanotubes (CNTs) suspended between the fin structures and contacting a side surface of the second isoelectric point material in the fin structures; a gate wrapped around the array of CNTs; and source and drain contacts arranged over the fin structures; wherein each of the fin structures have a trapezoid shape or parallel sides that are oriented about 90° with respect to the substrate.

公开(公告)号：US20180261776A1

公开(公告)日：2018-09-13

申请号：US15975212

申请日：2018-05-09

申请人： Samsung Electronics Co., Ltd.

发明人： Eun Kyung LEE ,  Jeong Il Park

IPC分类号： H01L51/00

CPC分类号： H01L51/0071 ,  C07D495/22 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  Y02E10/549

摘要： A fused polycyclic heteroaromatic compound is represented by one of Chemical Formula 1, 2A and 2B.

公开(公告)号：US20180233569A1

公开(公告)日：2018-08-16

申请号：US15864275

申请日：2018-01-08

申请人： Samsung Electronics Co., Ltd.

发明人： Suk Gyu Hahm ,  Jeong Il Park ,  Youngjun Yun ,  Joo Young Kim ,  Yong Uk Lee

IPC分类号： H01L29/423 ,  H01L29/417 ,  H01L21/28 ,  H01L51/05

CPC分类号： H01L29/42384 ,  H01L21/28158 ,  H01L27/3274 ,  H01L29/41733 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/055

摘要： A thin film transistor includes a gate electrode on a semiconductor layer, a first insulation layer between the semiconductor layer and the gate electrode, a second insulation layer on the gate electrode, and a source and drain electrode on the semiconductor layer. The gate electrode includes a first part and a second part adjacent to the first part. A width of the second part is greater than a width of the first part. The source electrode and the drain electrode are on the semiconductor layer and arranged such that the first part of the gate electrode is between the source electrode and the drain electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer through the first insulation layer and the second insulation layer, respectively. A space between the source electrode and the drain electrode is greater than the width of the first part.

公开(公告)号：US10018906B2

公开(公告)日：2018-07-10

申请号：US15018771

申请日：2016-02-08

申请人： Samsung Display Co., Ltd.

发明人： Seung-Bo Shim ,  Dong-Hyun Yu ,  Jin-Ho Ju

IPC分类号： G03F1/50 ,  H01L27/12 ,  G03F1/00 ,  H01L21/027 ,  H01L21/311 ,  H01L29/66 ,  H01L21/32 ,  H01L51/05

CPC分类号： G03F1/50 ,  G03F1/00 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/32 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L29/66757 ,  H01L51/0541 ,  H01L51/0545

摘要： A display device includes a substrate including a first region and a second region, a gate line and a data line on the substrate, a thin film transistor on the substrate, being connected to the gate line and the data line, and a pixel electrode connected to the thin film transistor, wherein the second region has a second contact hole of which an area is larger than that of a first contact hole of the first region.

公开(公告)号：US20180190918A1

公开(公告)日：2018-07-05

申请号：US15740611

申请日：2016-06-29

申请人： FLEXENABLE LIMITED ,  CAMBRIDGE ENTERPRISE LIMITED

发明人： Henning SIRRINGHAUS ,  Mark NIKOLKA ,  Iyad NASRALLAH ,  Jan JONGMAN

IPC分类号： H01L51/05 ,  H01L51/00

CPC分类号： H01L51/0558 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/002 ,  H01L51/0541

摘要： An electronic or optoelectronic device including a semiconductor layer, wherein the semiconductor layer comprises at least a semiconductive organic material, water species, and at least one additive in an amount of at least 0.1% by weight relative to the semiconductive organic material, which additive at least partly negates a charge carrier trapping effect caused by the water species on the semiconductive organic material.

公开(公告)号：US09997709B2

公开(公告)日：2018-06-12

申请号：US15320750

申请日：2015-07-14

申请人： DONGGUK UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

发明人： Yong Young Noh

IPC分类号： H01L51/00 ,  H01L21/04 ,  H01L21/38 ,  H01L29/66 ,  H01L51/05 ,  H01L29/16 ,  H01L29/227 ,  H01L29/24 ,  H01L29/786

CPC分类号： H01L51/002 ,  H01L21/041 ,  H01L21/38 ,  H01L29/1606 ,  H01L29/227 ,  H01L29/24 ,  H01L29/66045 ,  H01L29/66969 ,  H01L29/78684 ,  H01L29/7869 ,  H01L51/0005 ,  H01L51/0541 ,  H01L51/0558

摘要： The present invention relates to a method for manufacturing a transistor according selective printing of a dopant. For the manufacture of a transistor, a semiconductor layer is formed on a substrate, and a dopant layer is formed on the semiconductor layer. In the formation of the dopant layer, an inkjet printing is used to selectively print an n type dopant or a p type dopant.

公开(公告)号：US20180158892A1

公开(公告)日：2018-06-07

申请号：US12084528

申请日：2006-10-26

申请人： Benoit Racine

发明人： Benoit Racine

IPC分类号： H01L27/32

CPC分类号： H01L27/3274 ,  H01L27/3248 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0566 ,  H01L51/105 ,  H01L51/5012 ,  H01L51/5052 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5096 ,  H01L51/5203 ,  H01L51/5253 ,  H01L51/5271

摘要： In this element, one of the current flow electrodes of the transistor and the lower electrode of the diode form a common layer. According to the invention, the transistor includes what is called a “contact” zone made of semiconductor material which is placed between at least one of its current flow electrodes and its active zone made of semiconductor material and which is doped with one or more dopants, which are electron donors or electron acceptors.

公开(公告)号：US09978944B2

公开(公告)日：2018-05-22

申请号：US15123891

申请日：2015-02-13

申请人： PROMERUS, LLC ,  MERCK PATENT GMBH

发明人： Larry F Rhodes ,  Crystal D Cyrus ,  Hugh A Burgoon ,  Irina Afonina ,  Toby Cull

IPC分类号： C08F32/00 ,  H01L51/00 ,  H01L51/05 ,  C08F232/08 ,  C08F232/00

CPC分类号： H01L51/0034 ,  C08F232/00 ,  C08F232/08 ,  H01L51/0043 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545

摘要： The present invention relates to organic electronic devices, and more specifically to organic field effect transistors, comprising a dielectric layer that comprises a polycycloolefinic polymer with an olefinic side chain.