公开(公告)号：US08860022B2

公开(公告)日：2014-10-14

申请号：US13862716

申请日：2013-04-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi ,  Yusuke Nonaka ,  Yasuharu Hosaka

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225

Abstract: A method for evaluating an oxide semiconductor film, a method for evaluating a transistor including an oxide semiconductor film, a transistor which includes an oxide semiconductor film and has favorable switching characteristics, and an oxide semiconductor film which is applicable to a transistor and enables the transistor to have favorable switching characteristics are provided. A PL spectrum of an oxide semiconductor film obtained by low-temperature PL spectroscopy has a first curve whose local maximum value is found in a range of 1.6 eV or more and 1.8 eV or less and a second curve whose local maximum value is found in a range of 1.7 eV or more and 2.4 eV or less. A value obtained by dividing the area of the second curve by the sum of the area of the first curve and the area of the second curve is 0.1 or more and less than 1.

Abstract translation: 一种用于评估氧化物半导体膜的方法，包括氧化物半导体膜的晶体管的评估方法，包括氧化物半导体膜并且具有良好的开关特性的晶体管，以及可应用于晶体管并使晶体管能够实现的氧化物半导体膜 具有良好的开关特性。 通过低温PL光谱获得的氧化物半导体膜的PL光谱具有第一曲线，其局部最大值在1.6eV以上至1.8eV以下的范围内，第二曲线的局部最大值位于 范围为1.7eV以上且2.4eV以下。 通过将第二曲线的面积除以第一曲线的面积和第二曲线的面积之和而得到的值为0.1以上且小于1。