公开(公告)号：US20200013921A1

公开(公告)日：2020-01-09

申请号：US16487037

申请日：2018-02-26

Applicant: Soitec

Inventor： David Sotta

IPC: H01L33/00 ,  H01L21/02 ,  H01L21/324

Abstract: A method for preparing a crystalline semiconductor layer in order for the layer to be provided with a specific lattice parameter involves a relaxation procedure that is applied for a first time to a first start donor substrate in order to obtain a second donor substrate. Using the second donor substrate as the start donor substrate, the relaxation procedure is repeated for a number of times that is sufficient for the lattice parameter of the relaxed layer to be provided with the specific lattice parameter. A set of substrates may be obtained by the method.

公开(公告)号：US10084011B1

公开(公告)日：2018-09-25

申请号：US15491827

申请日：2017-04-19

Applicant: Soitec

Inventor： David Sotta ,  Olivier Ledoux ,  Olivier Bonnin

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/44 ,  H01L33/32 ,  H01L25/16

Abstract: A method for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters comprises providing a substrate including a medium, a flow layer disposed on the medium, and a plurality of strained crystalline semiconductor islands having an initial lattice parameter arranged on the flow layer. The strained semiconductor islands are selectively treated so as to form a first group of strained islands having a first lateral expansion potential, and a second group of strained islands having a second lateral expansion potential that is different from the first lateral expansion potential. The substrate is heat treated at a temperature at or above a glass transition temperature of the flow layer to cause differentiated relaxation of the islands of the first and second groups, such that a lattice parameter of the first group of relaxed islands differs from a lattice parameter of the second group of relaxed islands.