公开(公告)号：US09114997B2

公开(公告)日：2015-08-25

申请号：US13628282

申请日：2012-09-27

Applicant: SunEdison, Inc.

Inventor： Satish Bhusarapu ,  Puneet Gupta ,  Yue Huang

IPC: C01B33/029 ,  C01B33/021 ,  C01B33/03 ,  C01B33/027 ,  F23G5/30 ,  F23G7/06

CPC classification number: C01B33/03 ,  C01B33/027 ,  C01B33/029 ,  F23G5/30 ,  F23G7/06 ,  F23G2202/30 ,  F23G2209/142

Abstract: Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.