公开(公告)号：US20150315028A1

公开(公告)日：2015-11-05

申请号：US14799705

申请日：2015-07-15

Applicant: SunEdison, Inc.

Inventor： Satish Bhusarapu ,  Puneet Gupta ,  Yue Huang

IPC: C01B33/029

CPC classification number: C01B33/03 ,  C01B33/027 ,  C01B33/029 ,  F23G5/30 ,  F23G7/06 ,  F23G2202/30 ,  F23G2209/142

Abstract: Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.

Abstract translation: 公开了通过硅烷热分解生产多晶硅的方法。 该方法通常涉及在反应条件下操作的流化床反应器中硅烷的热分解，其导致相对于常规生产方法的高生产率。

公开(公告)号：US09114996B2

公开(公告)日：2015-08-25

申请号：US13628277

申请日：2012-09-27

Applicant: SunEdison, Inc.

Inventor： Satish Bhusarapu ,  Puneet Gupta ,  Yue Huang

IPC: C01B33/029 ,  C01B33/03 ,  C01B33/027 ,  B01J8/18 ,  F23C10/18

CPC classification number: C01B33/027 ,  B01J8/1809 ,  B01J8/1827 ,  B01J8/1836 ,  B01J2208/00398 ,  B01J2208/00407 ,  B01J2208/00539 ,  C01B33/029 ,  C01B33/03 ,  F23C10/18

Abstract: Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.

Abstract translation: 公开了通过硅烷热分解生产多晶硅的方法。 该方法通常涉及在反应条件下操作的流化床反应器中硅烷的热分解，其导致相对于常规生产方法的高生产率。

公开(公告)号：US09394180B2

公开(公告)日：2016-07-19

申请号：US13871205

申请日：2013-04-26

Applicant: SunEdison, Inc.

Inventor： Satish Bhusarapu ,  Yue Huang ,  Puneet Gupta

IPC: C01B33/03 ,  B01J8/24 ,  C01B33/039 ,  C01B33/107

CPC classification number: C01B33/03 ,  B01J8/24 ,  C01B33/039 ,  C01B33/10742 ,  C01B33/10763 ,  C01B33/10773

Abstract: Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon.

公开(公告)号：US20150110702A1

公开(公告)日：2015-04-23

申请号：US14582256

申请日：2014-12-24

Applicant: SunEdison, Inc.

Inventor： Puneet Gupta ,  Yue Huang ,  Satish Bhusarapu

IPC: C01B33/027

CPC classification number: C01B33/027 ,  C01B33/03

Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.

Abstract translation: 公开了在基本闭环过程和系统中生产多晶硅。 方法和系统通常涉及三氯硅烷的歧化以产生硅烷或二氯硅烷以及硅烷或二氯硅烷的热分解以产生多晶硅。

公开(公告)号：US10407309B2

公开(公告)日：2019-09-10

申请号：US14582256

申请日：2014-12-24

Applicant: SunEdison, Inc.

Inventor： Puneet Gupta ,  Yue Huang ,  Satish Bhusarapu

IPC: C01B33/027 ,  C01B33/03

Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.

公开(公告)号：US20150315029A1

公开(公告)日：2015-11-05

申请号：US14799728

申请日：2015-07-15

Applicant: SunEdison, Inc.

Inventor： Satish Bhusarapu ,  Puneet Gupta ,  Yue Huang

IPC: C01B33/029

CPC classification number: C01B33/027 ,  B01J8/1809 ,  B01J8/1827 ,  B01J8/1836 ,  B01J2208/00398 ,  B01J2208/00407 ,  B01J2208/00539 ,  C01B33/029 ,  C01B33/03 ,  F23C10/18

Abstract: Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.

公开(公告)号：US09114997B2

公开(公告)日：2015-08-25

申请号：US13628282

申请日：2012-09-27

Applicant: SunEdison, Inc.

Inventor： Satish Bhusarapu ,  Puneet Gupta ,  Yue Huang

IPC: C01B33/029 ,  C01B33/021 ,  C01B33/03 ,  C01B33/027 ,  F23G5/30 ,  F23G7/06

CPC classification number: C01B33/03 ,  C01B33/027 ,  C01B33/029 ,  F23G5/30 ,  F23G7/06 ,  F23G2202/30 ,  F23G2209/142

Abstract: Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.