NANOGRANULAR MAGNETIC FILM AND ELECTRONIC COMPONENT

    公开(公告)号:US20250111975A1

    公开(公告)日:2025-04-03

    申请号:US18901045

    申请日:2024-09-30

    Abstract: A nanogranular magnetic film includes first phases comprised of nano-domains dispersed in a second phase. The first phases include Fe and Co. The second phase includes a second phase compound including at least one selected from the group consisting of O, N, and F. A measurement range is determined in the nanogranular magnetic film. The measurement range is divided with grids including at least 80,000 grids each measuring 1 nm×1 nm×1 nm. Fe/(Fe+Co) and a concentration of the second phase compound of each of the grids are measured in atomic ratio. Provided that the grids are classified into MX-rich grids and MX-poor grids, a CV of Fe/(Fe+Co) of the MX-rich grids is larger than a CV of Fe/(Fe+Co) of the MX-poor grids.

    NANOGRANULAR MAGNETIC FILM AND ELECTRONIC COMPONENT

    公开(公告)号:US20250111976A1

    公开(公告)日:2025-04-03

    申请号:US18901060

    申请日:2024-09-30

    Abstract: A nanogranular magnetic film includes first phases comprised of nano-domains dispersed in a second phase. The first phases include Fe and Co. The second phase includes at least one selected from the group consisting of O, N, and F. A CV of Fe/(Fe+Co) of grids is 0.150 or more and 0.500 or less, provided that a measurement range is determined in the nanogranular magnetic film, the measurement range is divided with the grids including at least 80,000 grids each measuring 1 nm×1 nm×1 nm, and Fe/(Fe+Co) of each of the grids is measured in atomic ratio.

    Soft magnetic alloy and magnetic component

    公开(公告)号:US11495377B2

    公开(公告)日:2022-11-08

    申请号:US16971338

    申请日:2019-02-15

    Abstract: Provided is a soft magnetic alloy which has high saturation flux density and low coercivity and is represented by the compositional formula (Fe(1−(α+β))X1αX2β)(1−(a+b+c+d+e+f))MaPbSicCudX3eBf, wherein X1 is at least one element selected from the group consisting of Co and Ni, X2 is at least one element selected from the group consisting of Ti, V, Mn, Ag, Zn, Al, Sn, As, Sb, Bi, and rare earth elements, X3 is at least one element selected from the group consisting of C and Ge, and M is at least one element selected from the group consisting of Zr, Nb, Hf, Ta, Mo, and W, and wherein 0.030≤a≤0.120, 0.010≤b≤0.150, 0≤c≤0.050, 0≤d≤0.020, 0≤e≤0.100, 0≤f≤0.030, α≥0, β≥0, and 0≤α+β≤0.55.

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