公开(公告)号：US20150027538A1

公开(公告)日：2015-01-29

申请号：US14381321

申请日：2013-02-28

Applicant: TDK CORPORATION

Inventor： Yasuhiro Aida ,  Daisuke Tanaka ,  Masato Kurihara

IPC: H01L31/032 ,  H01L31/18 ,  H01L31/06

CPC classification number: H01L31/0322 ,  H01L31/0368 ,  H01L31/06 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: A solar battery capable of increasing conversion efficiency compared with a conventional solar battery using a chalcopyrite p-type light absorption layer. A light absorption layer of the solar battery is a p-type semiconductor layer including Cu, Ga, and an element selected from group VIb elements. A photoluminescence spectrum or a cathode luminescence spectrum obtained from the light absorption layer includes an emission peak with the half-value width of not less than 1 meV and not more than 15 meV. The ratio of the particles with the grain size of not less than 2 μm and not more than 8 μm in a surface of the light absorption layer to the surface area of the entire film is not less than 90%.

Abstract translation: 与使用黄铜矿p型光吸收层的常规太阳能电池相比，能够提高转换效率的太阳能电池。 太阳能电池的光吸收层是包含Cu，Ga的p型半导体层和选自VIb族元素的元素。 从光吸收层获得的光致发光光谱或阴极发光光谱包括半值宽度不小于1meV且不大于15meV的发射峰。 光吸收层的表面的粒径为2μm以上且8μm以下的粒子与整个膜的表面积的比例为90％以上。