公开(公告)号：US20150136216A1

公开(公告)日：2015-05-21

申请号：US14381253

申请日：2013-02-19

Applicant: TDK CORPORATION

Inventor： Masato Kurihara

IPC: H01L31/072

CPC classification number: H01L31/072 ,  H01L31/0326 ,  Y02E10/50

Abstract: Provided is a compound semiconductor solar cell (2) with improved conversion efficiency. The compound semiconductor solar cell includes a substrate (4), a back electrode (6) disposed on the substrate, a p-type compound semiconductor light absorber layer (8) disposed on the back electrode, an n-type compound semiconductor buffer layer (10) disposed on the p-type compound semiconductor light absorber layer, and a transparent electrode (12) disposed on the n-type compound semiconductor buffer layer. The p-type compound semiconductor light absorber layer (8) is formed of (AgxCu1-x)2aZnb(GeySn1-y)c(S1-zSez)4, wherein 0≦x≦1, 0≦y≦1, 0≦z≦10.5≦a≦1.5, 0.5≦b≦1.5, and 0.5≦c≦1.5. The n-type compound semiconductor buffer layer (10) contains at least one of tin and germanium. The n-type compound semiconductor buffer layer (10) has a lower tin and germanium concentration than the p-type compound semiconductor light absorber layer (8).

Abstract translation: 提供了具有改进的转换效率的化合物半导体太阳能电池（2）。 化合物半导体太阳能电池包括基板（4），设置在基板上的背面电极（6），设置在背面电极上的p型化合物半导体光吸收层（8），n型化合物半导体缓冲层 设置在p型化合物半导体光吸收层上的透明电极（12）和设置在n型化合物半导体缓冲层上的透明电极（12）。 p型化合物半导体光吸收层（8）由（AgxCu1-x）2aZnb（GeySn1-y）c（S1-zSez）4形成，其中0＆nlE; x＆nlE; 1,0和nlE; y＆nlE; 1,0＆ ; 10.5＆nlE; a＆nlE; 1.5,0.5＆nlE; b＆nlE; 1.5和0.5＆amp; nlE; c＆nlE; 1.5。 n型化合物半导体缓冲层（10）含有锡和锗中的至少一种。 n型化合物半导体缓冲层（10）的锡和锗浓度比p型化合物半导体光吸收层（8）低。

公开(公告)号：US20150027538A1

公开(公告)日：2015-01-29

申请号：US14381321

申请日：2013-02-28

Applicant: TDK CORPORATION

Inventor： Yasuhiro Aida ,  Daisuke Tanaka ,  Masato Kurihara

IPC: H01L31/032 ,  H01L31/18 ,  H01L31/06

CPC classification number: H01L31/0322 ,  H01L31/0368 ,  H01L31/06 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: A solar battery capable of increasing conversion efficiency compared with a conventional solar battery using a chalcopyrite p-type light absorption layer. A light absorption layer of the solar battery is a p-type semiconductor layer including Cu, Ga, and an element selected from group VIb elements. A photoluminescence spectrum or a cathode luminescence spectrum obtained from the light absorption layer includes an emission peak with the half-value width of not less than 1 meV and not more than 15 meV. The ratio of the particles with the grain size of not less than 2 μm and not more than 8 μm in a surface of the light absorption layer to the surface area of the entire film is not less than 90%.

Abstract translation: 与使用黄铜矿p型光吸收层的常规太阳能电池相比，能够提高转换效率的太阳能电池。 太阳能电池的光吸收层是包含Cu，Ga的p型半导体层和选自VIb族元素的元素。 从光吸收层获得的光致发光光谱或阴极发光光谱包括半值宽度不小于1meV且不大于15meV的发射峰。 光吸收层的表面的粒径为2μm以上且8μm以下的粒子与整个膜的表面积的比例为90％以上。

公开(公告)号：US20150096617A1

公开(公告)日：2015-04-09

申请号：US14381418

申请日：2013-02-28

Applicant: TDK CORPORATION

Inventor： Masato Kurihara ,  Yasuhiro Aida

IPC: H01L31/032 ,  H01L31/0296 ,  H01L31/0749

CPC classification number: H01L31/0322 ,  H01L31/0296 ,  H01L31/0368 ,  H01L31/0749 ,  Y02E10/541

Abstract: A compound semiconductor solar battery according to the present invention includes a substrate; a back electrode disposed on the substrate; a p-type compound semiconductor light absorbing layer disposed on the back electrode; an n-type compound semiconductor buffer layer disposed on the p-type compound semiconductor light absorbing layer; and a transparent electrode disposed on the n-type compound semiconductor buffer layer. The p-type compound semiconductor light absorbing layer has a cross sectional structure including, in a thickness direction, a portion only of a single particle and a portion of a plurality of piled particles. In the portion of a plurality of piled particles, the particles in contact with the back electrode have a ratio y1 of Ga/(In+Ga), and the particles in contact with the n-type compound semiconductor buffer layer have a ratio y2 of Ga/(In+Ga), where y1>y2.

Abstract translation: 根据本发明的复合半导体太阳能电池包括基板; 设置在所述基板上的背面电极; 设置在背面电极上的p型化合物半导体光吸收层; 设置在p型化合物半导体光吸收层上的n型化合物半导体缓冲层; 以及设置在n型化合物半导体缓冲层上的透明电极。 p型化合物半导体光吸收层具有在厚度方向上仅具有单个颗粒的一部分和多个堆积颗粒的一部分的横截面结构。 在多个堆积粒子的部分中，与背面电极接触的粒子的比率y1为Ga /（In + Ga），与n型化合物半导体缓冲层接触的粒子的比例y2为 Ga /（In + Ga），其中y1> y2。