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公开(公告)号:US09391553B2
公开(公告)日:2016-07-12
申请号:US14098161
申请日:2013-12-05
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Yisong Lu , Ruochen Zhang , Wei Zuo
Abstract: A circuit includes a processor that analyzes a pulse width modulated (PWM) signal feedback from a brushless DC motor to determine a transition between a mutual inductance zero crossing condition and a Back Electro Motive Force (BEMF) zero crossing condition of the brushless DC motor. A mutual inductance controller is executed by the processor to commutate the brushless DC motor at startup of the motor when the mutual inductance zero crossing condition is detected by the processor. A BEMF controller is executed by the processor to commutate the brushless DC motor after startup of the motor when the BEMF zero crossing condition is detected by the processor.
Abstract translation: 电路包括处理器,其分析来自无刷直流电动机的脉冲宽度调制(PWM)信号反馈以确定无刷直流电动机的互感零交叉条件和后向电动力(BEMF)过零状态之间的转变。 当处理器检测到互感零交叉条件时,由电感器执行互感控制器,以在马达启动时对无刷直流电机进行换向。 当处理器检测到BEMF过零状态时,BEMF控制器由处理器执行,以在电动机起动之后换向无刷直流电动机。
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12.
公开(公告)号:US20150372678A1
公开(公告)日:2015-12-24
申请号:US14742540
申请日:2015-06-17
Applicant: Texas Instruments Incorporated
Inventor: Ruochen Zhang , Xiaofan Qiu , Jingwei Xu , Qingjie Ma
IPC: H03K19/0175
CPC classification number: H03K17/165 , H03K17/0822 , H03K17/284 , H03K19/017509 , H03K2217/0027
Abstract: A gate driver IC for driving an NMOS transistor having a drain coupled through a load to a power supply. A gate driver output drives the gate of the NMOS transistor. A comparator receives the drain voltage of the NMOS transistor and compares it to a reference voltage representative of a short circuit condition between the drain and the power supply. The comparator outputs a first value if the drain voltage is greater than the reference voltage and outputs a second value if the drain voltage is less than or equal to the reference voltage. Control circuitry receives the output of the first comparator and pulls the voltage of the gate driver output low if the comparator output is of the first value. Adaptive masking circuitry is operable, upon an application of an “on” signal to the gate driver output, to mask the output of the comparator such that a condition of the drain voltage being greater than the reference voltage does not cause the control circuitry to pull the voltage of the gate driver output low. The adaptive masking circuitry detects a Miller plateau in the gate voltage of the external NMOS transistor. The adaptive masking circuitry stops masking the output of the comparator after the end of the Miller plateau.
Abstract translation: 一种用于驱动具有通过负载耦合到电源的漏极的NMOS晶体管的栅极驱动器IC。 栅极驱动器输出驱动NMOS晶体管的栅极。 比较器接收NMOS晶体管的漏极电压,并将其与表示漏极和电源之间的短路状态的参考电压进行比较。 如果漏极电压大于参考电压,则比较器输出第一值,并且如果漏极电压小于等于参考电压则输出第二值。 如果比较器输出为第一值,则控制电路接收第一比较器的输出并将栅极驱动器的电压拉低。 自适应屏蔽电路在对栅极驱动器输出施加“导通”信号时可操作以掩蔽比较器的输出,使得漏极电压大于参考电压的条件不会导致控制电路拉 栅极驱动器的电压输出低电平。 自适应屏蔽电路检测外部NMOS晶体管的栅极电压的米勒平台。 自适应屏蔽电路在米勒平台结束后停止屏蔽比较器的输出。
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