公开(公告)号：US11532481B2

公开(公告)日：2022-12-20

申请号：US16916465

申请日：2020-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Li Lin ,  Chih-Teng Liao ,  Jui Fu Hsieh ,  Chih Hsuan Cheng ,  Tzu-Chan Weng

IPC: H01L21/3065 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78 ,  H01J37/32

Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming a gate layer over the fin; and patterning the gate layer in a plasma etching tool using a plasma etching process to form a gate over the fin, where patterning the gate layer includes: turning on and off a top radio frequency (RF) source of the plasma etching tool alternately during the plasma etching process; and turning on and off a bottom RF source of the plasma etching tool alternately during the plasma etching process, where there is a timing offset between first time instants when the top RF source is turned on and respective second time instants when the bottom RF source is turned on.

公开(公告)号：US20220367196A1

公开(公告)日：2022-11-17

申请号：US17814607

申请日：2022-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Li Lin ,  Chih-Teng Liao ,  Jui Fu Hsieh ,  Chih Hsuan Cheng ,  Tzu-Chan Weng

IPC: H01L21/3065 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78 ,  H01J37/32

Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming a gate layer over the fin; and patterning the gate layer in a plasma etching tool using a plasma etching process to form a gate over the fin, where patterning the gate layer includes: turning on and off a top radio frequency (RF) source of the plasma etching tool alternately during the plasma etching process; and turning on and off a bottom RF source of the plasma etching tool alternately during the plasma etching process, where there is a timing offset between first time instants when the top RF source is turned on and respective second time instants when the bottom RF source is turned on.