公开(公告)号：US20150131364A1

公开(公告)日：2015-05-14

申请号：US14077263

申请日：2013-11-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-jer HSIEH ,  Yangsyu LIN ,  Hsiao Wen LU ,  Chiting CHENG ,  Jonathan Tsung-Yung CHANG

IPC: G11C7/12 ,  G11C11/419

CPC classification number: G11C11/419 ,  G11C7/12

Abstract: A device includes a transistor switch coupled between a bit line voltage node and a ground node and a boost signal circuit coupled to a gate node of the transistor switch, where the boost signal circuit providing a boost signal responsive to a write enable signal. The device also includes a first delay element and a first capacitor in series with the first delay element. The first capacitor has a first end coupled to the bit line voltage node and a second end coupled to the gate node through the first delay element.

公开(公告)号：US20200005835A1

公开(公告)日：2020-01-02

申请号：US16263904

申请日：2019-01-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Chi WU ,  Cheng Hung LEE ,  Chien-Kuo SU ,  Chiting CHENG ,  Yu-Hao HSU ,  Yangsyu LIN

IPC: G11C7/10 ,  G11C7/12

Abstract: The present disclosure describes various exemplary memory storage devices that can be programmed to write electronic data into one or more memory cells in a write mode of operation and/or to read the electronic data from the one or more memory cells in a read mode of operation. The various exemplary memory storage devices can select various control lines to read the electronic data from the one or more memory cells onto data lines and/or to write the electronic data from these data lines into the one or more memory cells. In some situations, these data lines are charged, also referred to as pre-charged, to a first logical value, such as a logical one, before the various exemplary memory storage devices write the electronic data into the one or more memory cells. During this pre-charging of these data lines, the various exemplary memory storage devices electrically isolate these data lines from specialized circuitry within these exemplary memory storage devices. This specialized circuitry, also referred to as a write driver, writes the electronic data onto these data lines for storage in the one or more memory cells during the write mode of operation.