公开(公告)号：US20210366784A1

公开(公告)日：2021-11-25

申请号：US17338929

申请日：2021-06-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Lung Cheng ,  Yen-Chun Lin ,  Da-Wen Lin

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L29/10 ,  H01L21/8234

Abstract: A semiconductor device includes a P-type Field Effect Transistor (PFET) and an NFET. The PFET includes an N-well disposed in a substrate, a first fin structure disposed over the N-well, a first liner layer disposed over the N-well, and a second liner layer disposed over the first liner layer. The first liner layer and the second liner layer include different materials. The NFET includes a P-well disposed in the substrate, a second fin structure disposed over the P-well, a third liner layer disposed over the P-well. The third liner layer and the second liner layer include the same materials.

公开(公告)号：US20180315664A1

公开(公告)日：2018-11-01

申请号：US15725544

申请日：2017-10-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Lung Cheng ,  Yen-Chun Lin ,  Da-Wen Lin

IPC: H01L21/8238 ,  H01L27/092

Abstract: A semiconductor device includes a P-type Field Effect Transistor (PFET) and an NFET. The PFET includes an N-well disposed in a substrate, a first fin structure disposed over the N-well, a first liner layer disposed over the N-well, and a second liner layer disposed over the first liner layer. The first liner layer and the second liner layer include different materials. The NFET includes a P-well disposed in the substrate, a second fin structure disposed over the P-well, a third liner layer disposed over the P-well. The third liner layer and the second liner layer include the same materials.