公开(公告)号：US20200006466A1

公开(公告)日：2020-01-02

申请号：US16273260

申请日：2019-02-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Han Lin ,  Te-Hsin Chiu ,  Wei Cheng Wu ,  Te-An Chen

IPC: H01L49/02 ,  H01L27/06 ,  H01L21/8234

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device has a substrate having isolation structures therein and a capacitor structure located on a top surface of the isolation structure. The capacitor structure comprises a semiconductor material pattern and an insulator pattern inlaid in the semiconductor material pattern. The semiconductor material pattern and the insulator pattern are located at a same horizontal level on the isolation structure.