公开(公告)号：US20190164744A1

公开(公告)日：2019-05-30

申请号：US15840994

申请日：2017-12-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsuan Yang ,  Wen Han Hung ,  Tzy-Kuang Lee ,  Chia Ying Lin

IPC: H01L21/027 ,  H01L29/06 ,  H01L29/40 ,  H01L21/762 ,  H01L21/266

Abstract: A method for fabricating a semiconductor device includes forming a plurality of isolation structures in a semiconductor substrate and forming a plurality of blocking structures over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures. The method further includes forming a photoresist layer on the semiconductor substrate, exposing the photoresist layer to a light source through a mask, and developing the photoresist layer to create a patterned photoresist feature that covers a first region of a portion of the semiconductor substrate between two of the isolation structures. The portion of the semiconductor substrate having a second region that is exposed.