公开(公告)号：US10283361B1

公开(公告)日：2019-05-07

申请号：US15840994

申请日：2017-12-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsuan Yang ,  Wen Han Hung ,  Tzy-Kuang Lee ,  Chia Ying Lin

IPC: H01L21/027 ,  H01L29/06 ,  H01L21/266 ,  H01L21/762 ,  H01L29/40 ,  H01L29/808 ,  H01L29/66

Abstract: A method for fabricating a semiconductor device includes forming a plurality of isolation structures in a semiconductor substrate and forming a plurality of blocking structures over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures. The method further includes forming a photoresist layer on the semiconductor substrate, exposing the photoresist layer to a light source through a mask, and developing the photoresist layer to create a patterned photoresist feature that covers a first region of a portion of the semiconductor substrate between two of the isolation structures. The portion of the semiconductor substrate having a second region that is exposed.

公开(公告)号：US20210391251A1

公开(公告)日：2021-12-16

申请号：US16900567

申请日：2020-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung Hsun Lin ,  Che-Chih Hsu ,  Wen-Chu Huang ,  Chinyu Su ,  Yen-Yu Chen ,  Wei-Chun Hua ,  Wen Han Hung

IPC: H01L23/522 ,  H01L23/66 ,  H01L23/64 ,  H01L21/768 ,  H01L49/02

Abstract: A device includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is between the substrate and the first conductive layer, and is electrically connected to the first conductive layer. The first conductive via extends through at least two dielectric layers, and has thickness greater than about 8 kilo-Angstroms. An inductor having high quality factor is formed in the first conductive layer and also includes the first conductive via.

公开(公告)号：US20190244807A1

公开(公告)日：2019-08-08

申请号：US16384280

申请日：2019-04-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsuan Yang ,  Wen Han Hung ,  Tzy-Kuang Lee ,  Chia Ying Lin

IPC: H01L21/027 ,  H01L29/40 ,  H01L21/762 ,  H01L21/266 ,  H01L29/06

CPC classification number: H01L21/0274 ,  H01L21/266 ,  H01L21/76224 ,  H01L21/76229 ,  H01L29/0649 ,  H01L29/402 ,  H01L29/6659 ,  H01L29/808

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of isolation structures on the semiconductor substrate, and a plurality of blocking structures disposed directly over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures.

公开(公告)号：US12199033B2

公开(公告)日：2025-01-14

申请号：US18180079

申请日：2023-03-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung Hsun Lin ,  Wei-Chun Hua ,  Wen-Chu Huang ,  Yen-Yu Chen ,  Che-Chih Hsu ,  Chinyu Su ,  Wen Han Hung

IPC: H01L23/52 ,  H01L21/027 ,  H01L21/768 ,  H01L23/522 ,  H01L23/64 ,  H01L23/66 ,  H01L49/02

Abstract: A device includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is between the substrate and the first conductive layer, and is electrically connected to the first conductive layer. The first conductive via extends through at least two dielectric layers, and has thickness greater than about 8 kilo-Angstroms. An inductor having high quality factor is formed in the first conductive layer and also includes the first conductive via.

公开(公告)号：US11621165B2

公开(公告)日：2023-04-04

申请号：US17181710

申请日：2021-02-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsuan Yang ,  Wen Han Hung ,  Tzy-Kuang Lee ,  Chia Ying Lin

IPC: H01L21/027 ,  H01L29/06 ,  H01L21/266 ,  H01L21/762 ,  H01L29/40 ,  H01L29/808 ,  H01L29/66

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of isolation structures on the semiconductor substrate, and a plurality of blocking structures disposed directly over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures.

公开(公告)号：US12087627B2

公开(公告)日：2024-09-10

申请号：US17870213

申请日：2022-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung Hsun Lin ,  Che-Chih Hsu ,  Wen-Chu Huang ,  Chinyu Su ,  Yen-Yu Chen ,  Wei-Chun Hua ,  Wen Han Hung

IPC: H01L21/76 ,  H01L21/027 ,  H01L21/768 ,  H01L23/522 ,  H01L23/64 ,  H01L23/66 ,  H01L49/02

CPC classification number: H01L21/76877 ,  H01L21/0276 ,  H01L21/76802 ,  H01L23/5226 ,  H01L23/5227 ,  H01L23/645 ,  H01L23/66 ,  H01L28/10

Abstract: A device includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is between the substrate and the first conductive layer, and is electrically connected to the first conductive layer. The first conductive via extends through at least two dielectric layers, and has thickness greater than about 8 kilo-Angstroms. An inductor having high quality factor is formed in the first conductive layer and also includes the first conductive via.

公开(公告)号：US20220367343A1

公开(公告)日：2022-11-17

申请号：US17870213

申请日：2022-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung Hsun Lin ,  Che-Chih Hsu ,  Wen-Chu Huang ,  Chinyu Su ,  Yen-Yu Chen ,  Wei-Chun Hua ,  Wen Han Hung

IPC: H01L23/522 ,  H01L23/66 ,  H01L49/02 ,  H01L21/768 ,  H01L23/64

Abstract: A device includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is between the substrate and the first conductive layer, and is electrically connected to the first conductive layer. The first conductive via extends through at least two dielectric layers, and has thickness greater than about 8 kilo-Angstroms. An inductor having high quality factor is formed in the first conductive layer and also includes the first conductive via.

公开(公告)号：US11616013B2

公开(公告)日：2023-03-28

申请号：US16900567

申请日：2020-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung Hsun Lin ,  Che-Chih Hsu ,  Wen-Chu Huang ,  Chinyu Su ,  Yen-Yu Chen ,  Wei-Chun Hua ,  Wen Han Hung

IPC: H01L23/52 ,  H01L23/522 ,  H01L23/66 ,  H01L49/02 ,  H01L21/768 ,  H01L23/64

Abstract: A device includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is between the substrate and the first conductive layer, and is electrically connected to the first conductive layer. The first conductive via extends through at least two dielectric layers, and has thickness greater than about 8 kilo-Angstroms. An inductor having high quality factor is formed in the first conductive layer and also includes the first conductive via.

公开(公告)号：US20210175071A1

公开(公告)日：2021-06-10

申请号：US17181710

申请日：2021-02-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsuan Yang ,  Wen Han Hung ,  Tzy-Kuang Lee ,  Chia Ying Lin

IPC: H01L21/027 ,  H01L29/06 ,  H01L21/266 ,  H01L21/762 ,  H01L29/40

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of isolation structures on the semiconductor substrate, and a plurality of blocking structures disposed directly over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures.

公开(公告)号：US10930502B2

公开(公告)日：2021-02-23

申请号：US16384280

申请日：2019-04-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsuan Yang ,  Wen Han Hung ,  Tzy-Kuang Lee ,  Chia Ying Lin

IPC: H01L29/06 ,  H01L21/762 ,  H01L21/027 ,  H01L21/266 ,  H01L29/40 ,  H01L29/808 ,  H01L29/66

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of isolation structures on the semiconductor substrate, and a plurality of blocking structures disposed directly over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures.