公开(公告)号：US20190244807A1

公开(公告)日：2019-08-08

申请号：US16384280

申请日：2019-04-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsuan Yang ,  Wen Han Hung ,  Tzy-Kuang Lee ,  Chia Ying Lin

IPC: H01L21/027 ,  H01L29/40 ,  H01L21/762 ,  H01L21/266 ,  H01L29/06

CPC classification number: H01L21/0274 ,  H01L21/266 ,  H01L21/76224 ,  H01L21/76229 ,  H01L29/0649 ,  H01L29/402 ,  H01L29/6659 ,  H01L29/808

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of isolation structures on the semiconductor substrate, and a plurality of blocking structures disposed directly over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures.

公开(公告)号：US10283361B1

公开(公告)日：2019-05-07

申请号：US15840994

申请日：2017-12-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsuan Yang ,  Wen Han Hung ,  Tzy-Kuang Lee ,  Chia Ying Lin

IPC: H01L21/027 ,  H01L29/06 ,  H01L21/266 ,  H01L21/762 ,  H01L29/40 ,  H01L29/808 ,  H01L29/66

Abstract: A method for fabricating a semiconductor device includes forming a plurality of isolation structures in a semiconductor substrate and forming a plurality of blocking structures over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures. The method further includes forming a photoresist layer on the semiconductor substrate, exposing the photoresist layer to a light source through a mask, and developing the photoresist layer to create a patterned photoresist feature that covers a first region of a portion of the semiconductor substrate between two of the isolation structures. The portion of the semiconductor substrate having a second region that is exposed.

公开(公告)号：US20210175071A1

公开(公告)日：2021-06-10

申请号：US17181710

申请日：2021-02-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsuan Yang ,  Wen Han Hung ,  Tzy-Kuang Lee ,  Chia Ying Lin

IPC: H01L21/027 ,  H01L29/06 ,  H01L21/266 ,  H01L21/762 ,  H01L29/40

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of isolation structures on the semiconductor substrate, and a plurality of blocking structures disposed directly over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures.

公开(公告)号：US10930502B2

公开(公告)日：2021-02-23

申请号：US16384280

申请日：2019-04-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsuan Yang ,  Wen Han Hung ,  Tzy-Kuang Lee ,  Chia Ying Lin

IPC: H01L29/06 ,  H01L21/762 ,  H01L21/027 ,  H01L21/266 ,  H01L29/40 ,  H01L29/808 ,  H01L29/66

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of isolation structures on the semiconductor substrate, and a plurality of blocking structures disposed directly over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures.

公开(公告)号：US20190164744A1

公开(公告)日：2019-05-30

申请号：US15840994

申请日：2017-12-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsuan Yang ,  Wen Han Hung ,  Tzy-Kuang Lee ,  Chia Ying Lin

IPC: H01L21/027 ,  H01L29/06 ,  H01L29/40 ,  H01L21/762 ,  H01L21/266

Abstract: A method for fabricating a semiconductor device includes forming a plurality of isolation structures in a semiconductor substrate and forming a plurality of blocking structures over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures. The method further includes forming a photoresist layer on the semiconductor substrate, exposing the photoresist layer to a light source through a mask, and developing the photoresist layer to create a patterned photoresist feature that covers a first region of a portion of the semiconductor substrate between two of the isolation structures. The portion of the semiconductor substrate having a second region that is exposed.

公开(公告)号：US11621165B2

公开(公告)日：2023-04-04

申请号：US17181710

申请日：2021-02-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsuan Yang ,  Wen Han Hung ,  Tzy-Kuang Lee ,  Chia Ying Lin

IPC: H01L21/027 ,  H01L29/06 ,  H01L21/266 ,  H01L21/762 ,  H01L29/40 ,  H01L29/808 ,  H01L29/66

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of isolation structures on the semiconductor substrate, and a plurality of blocking structures disposed directly over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures.