公开(公告)号：US20210279396A1

公开(公告)日：2021-09-09

申请号：US17031547

申请日：2020-09-24

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Po-Sheng WANG ,  Chao Yuan CHENG ,  Chien-Chi TIEN ,  Yangsyu LIN

IPC: G06F30/392 ,  H01L27/02 ,  H01L27/118

Abstract: A method of forming an integrated circuit includes placing a first cell layout design of the integrated circuit on a layout design, and manufacturing the integrated circuit based on the layout design. Placing the first cell layout design includes placing a first active region layout pattern adjacent to a first cell boundary, placing a second active region layout pattern adjacent to a second cell boundary, and placing a first set of active region layout patterns between the first and second active region layout patterns, according to a first set of guidelines. The first set of guidelines includes selecting transistors of a first type with a first driving strength and transistors of a second type with a second driving strength. In some embodiments, the first, second and first set of active region layout patterns extend in the first direction, and are on a first layout level.

公开(公告)号：US20200081636A1

公开(公告)日：2020-03-12

申请号：US16685722

申请日：2019-11-15

Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.

Inventor： Yu-Hao HSU ,  Cheng Hung LEE ,  Chen-Lin YANG ,  Chiting CHENG ,  Fu-An WU ,  Hung-Jen LIAO ,  Jung-Ping YANG ,  Jonathan Tsung-Yung CHANG ,  Wei Min CHAN ,  Yen-Huei CHEN ,  Yangsyu LIN ,  Chien-Chen LIN

IPC: G06F3/06 ,  H04J14/02 ,  H04B10/27 ,  H04B10/03 ,  G11C16/12 ,  G11C5/14 ,  G11C16/30 ,  G11C11/4074

Abstract: Various embodiments for configurable memory storage systems are disclosed. The configurable memory storages selectively choose an operational voltage signal from among multiple operational voltage signals to dynamically control various operational parameters. For example, the configurable memory storages selectively choose a maximum operational voltage signal from among the multiple operational voltage signals to maximize read/write speed. As another example, the configurable memory storages selectively choose a minimum operational voltage signal from among the multiple operational voltage signals to minimize power consumption.