公开(公告)号：US12048147B2

公开(公告)日：2024-07-23

申请号：US17589590

申请日：2022-01-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Meng-Sheng Chang ,  Chia-En Huang ,  Wan-Hsueh Cheng ,  Yao-Jen Yang ,  Yih Wang

IPC: G11C17/00 ,  G06F30/392 ,  G11C17/16 ,  G11C17/18 ,  H01L23/522 ,  H01L23/528 ,  H10B20/20

CPC classification number: H10B20/20 ,  G06F30/392 ,  G11C17/16 ,  G11C17/18 ,  H01L23/5226 ,  H01L23/528

Abstract: A structure includes first and second active areas, first and second gates and a data line. The first gate is continuous and crosses over the first active area and the second active area. The first gate corresponds to gate terminals of first and second transistors, and first source/drain regions of the first and the second active areas correspond to first source/drain terminals of the first and second transistors. The second gate includes first and second gate portions electrically isolated from each other. The first and second gate portions correspond to gate terminals of third and fourth transistors, respectively. The first gate portion crosses over the first active area, and the second gate portion crosses over the second active area. The first data line is coupled to the first source/drain regions of the first active area and the second active area.