公开(公告)号：US06446573B2

公开(公告)日：2002-09-10

申请号：US09925572

申请日：2001-08-09

申请人： Masaki Hirayama ,  Tadahiro Ohmi ,  Tatsushi Yamamoto ,  Takamitsu Tadera

发明人： Masaki Hirayama ,  Tadahiro Ohmi ,  Tatsushi Yamamoto ,  Takamitsu Tadera

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/511 ,  H01J37/3244

摘要： A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding means, a shower plate and a reaction gas supply passage. The microwave guiding means guides a microwave into the processing chamber. The shower plate has a gas inlet hole to supply to the processing chamber a reaction gas attaining a plasma state by the microwave, and a lower surface facing the processing chamber and an upper surface positioned on the opposite side of the lower surface. The reaction gas supply passage is positioned on the upper surface of the shower plate and supplies the reaction gas to the gas inlet hole. A wall surface of the reaction gas supply passage includes an upper surface of the shower plate and a conductor wall surface opposing the upper surface.

摘要翻译： 可以获得能够形成均匀等离子体并且应对较大成本的大尺寸基板的等离子体处理装置。 等离子体处理装置包括处理室，微波引导装置，喷淋板和反应气体供应通道。 微波引导装置引导微波进入处理室。 淋浴板具有气体入口孔，以通过微波向处理室供应达到等离子体状态的反应气体，以及面向处理室的下表面和位于下表面相对侧的上表面。 反应气体供给通路位于喷淋板的上表面，将反应气体供给到气体导入孔。 反应气体供给通道的壁面包括淋浴板的上表面和与上表面相对的导体壁表面。

公开(公告)号：US06286454B1

公开(公告)日：2001-09-11

申请号：US09583161

申请日：2000-05-30

申请人： Masaki Hirayama ,  Tadahiro Ohmi ,  Tatsushi Yamamoto ,  Takamitsu Tadera

发明人： Masaki Hirayama ,  Tadahiro Ohmi ,  Tatsushi Yamamoto ,  Takamitsu Tadera

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/511 ,  H01J37/3244

摘要： A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding device, a shower plate and a reaction gas supply passage. The microwave guiding device guides a microwave into the processing chamber. The shower plate has a gas inlet hole to supply to the processing chamber a reaction gas attaining a plasma state by the microwave, and a lower surface facing the processing chamber and an upper surface positioned on the opposite side of the lower surface. The reaction gas supply passage is a positioned on the upper surface of the shower plate and supplies the reaction gas to the gas inlet hole. A wall surface of the reaction gas supply passage includes an upper surface of the shower plate and a conductor wall surface opposing the upper surface.

摘要翻译： 可以获得能够形成均匀等离子体并且应对较大成本的大尺寸基板的等离子体处理装置。 等离子体处理装置包括处理室，微波引导装置，喷淋板和反应气体供给通道。 微波引导装置引导微波进入处理室。 淋浴板具有气体入口孔，以通过微波向处理室供应达到等离子体状态的反应气体，以及面向处理室的下表面和位于下表面相对侧的上表面。 反应气体供给通道位于淋浴板的上表面上，并将反应气体供给到气体入口孔。 反应气体供给通道的壁面包括淋浴板的上表面和与上表面相对的导体壁表面。