公开(公告)号：US20240363317A1

公开(公告)日：2024-10-31

申请号：US18138811

申请日：2023-04-25

Applicant: Applied Materials, Inc.

Inventor： Vicknesh Sahmuganathan ,  Sze Chieh Tan ,  Kok Keong Lim ,  Song Seng Low ,  Yi Kun Kelvin Goh ,  Abdul Rahman Bin Abu Bakar ,  Syed Muhammad Darwis ,  Cheng Hong Tan ,  John Sudijono ,  Han Yan Koh

IPC: H01J37/32 ,  C23C16/511 ,  C23C16/56 ,  H01L21/02

CPC classification number: H01J37/32862 ,  C23C16/511 ,  C23C16/56 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32816 ,  H01L21/02274 ,  H01J2237/332

Abstract: Methods and apparatus for cleaning a dielectric tube are described. The dielectric tube is exposed to a cleaning gas comprising a fluorine-containing compound and a microwave plasma is generated. The dielectric tube is cleaned to restore transparency and increase electronic coupling between the microwave waveguide and the plasma through the dielectric tube.

公开(公告)号：US12068208B2

公开(公告)日：2024-08-20

申请号：US17475736

申请日：2021-09-15

Applicant: Tokyo Electron Limited

Inventor： Taro Ikeda ,  Yuki Osada

IPC: H01J37/32 ,  C23C14/54 ,  C23C16/455 ,  C23C16/511 ,  C23C16/52 ,  C23C16/54 ,  H01L21/66

CPC classification number: H01L22/24 ,  C23C14/54 ,  C23C16/45508 ,  C23C16/4558 ,  C23C16/511 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32192 ,  H01J37/32935 ,  H01J37/32954 ,  H01J37/3299 ,  H01L22/12 ,  H01J37/32972

Abstract: A method of controlling plasma includes providing a plasma processing apparatus that includes N microwave introducing radiators disposed in a circumferential direction of a ceiling plate of a processing container so as to introduce microwaves for generating plasma into the processing container, wherein N≥2; and M sensors and configured to monitor at least one of electron density Ne and electron temperature Te of the plasma generated in the processing container, wherein M equals to N or a multiple of N. The method further includes controlling at least one of a power and a phase of the microwaves introduced from the microwave introducing radiators based on at least one of electron density Ne and electron temperature Te of the plasma monitored by the M sensors.

公开(公告)号：US12046453B2

公开(公告)日：2024-07-23

申请号：US17018532

申请日：2020-09-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Ikeda ,  Atsushi Kubo ,  Eiki Kamata ,  Nobuhiko Yamamoto

IPC: H01J37/32 ,  C23C16/511 ,  C23C16/52 ,  H01L21/67

CPC classification number: H01J37/3222 ,  C23C16/52 ,  H01J37/32266 ,  H01J37/32311 ,  H01L21/67288 ,  C23C16/511 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32293 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/202

Abstract: A plasma processing apparatus includes: a processing container; a substrate holder disposed within the processing container and configured to hold a substrate thereon; a dielectric window disposed below the substrate holder; and a plurality of phased array antennas disposed below the dielectric window and configured to irradiate a plurality of electromagnetic waves.

公开(公告)号：US11996270B2

公开(公告)日：2024-05-28

申请号：US17401443

申请日：2021-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunhee Jeang ,  Seongkeun Cho ,  Kyungrim Kim ,  Incheol Song ,  Jangwon Cho

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01L21/67

CPC classification number: H01J37/32238 ,  H01J37/32229 ,  H01J37/32669 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/3266 ,  H01L21/67069

Abstract: A wafer processing apparatus includes a chamber body including a cavity region and a process region; a microwave waveguide configured to introduce a microwave into the cavity region; a first microwave window between the cavity region and the process region; and a magnetic field supplying device configured to apply a magnetic field inside the chamber body, wherein a thickness of the first microwave window is constant, and the first microwave window is configured to control a beam cross-section of the microwave in the process region.

公开(公告)号：US20240162020A1

公开(公告)日：2024-05-16

申请号：US18423636

申请日：2024-01-26

Applicant: Applied Materials, Inc.

Inventor： Hari Ponnekanti ,  Mukund Srinivasan

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/505 ,  C23C16/509 ,  C23C16/511 ,  C23C16/52

CPC classification number: H01J37/32935 ,  C23C16/4584 ,  C23C16/505 ,  C23C16/509 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32715 ,  H01J2237/202 ,  H01J2237/20214 ,  H01J2237/3321

Abstract: Apparatus and methods to process a substrate comprising a gas distribution assembly comprising a plasma process region with an array of individual plasma sources. A controller is connected to the array of individual plasma sources and the substrate support. The controller is configured monitor the position of the at least one substrate and provide or disable power to the individual plasma sources based on the position of the substrate relative to the individual plasma sources.

公开(公告)号：US20240120183A1

公开(公告)日：2024-04-11

申请号：US18263920

申请日：2022-01-24

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Ryota IFUKU ,  Takashi MATSUMOTO ,  Hiroki YAMADA

IPC: H01J37/32 ,  C23C16/26 ,  C23C16/455 ,  C23C16/511 ,  C23C16/52 ,  H01L21/02

CPC classification number: H01J37/32816 ,  C23C16/26 ,  C23C16/45557 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32743 ,  H01L21/02115 ,  H01L21/02274 ,  H01J37/32192 ,  H01J2237/182 ,  H01J2237/332

Abstract: A substrate processing method of processing a substrate includes: a carry-in process of carrying the substrate into a processing container; a first process of forming a first carbon film on the substrate with plasma of a first mixture gas containing a carbon-containing gas in a state in which interior of the processing container is maintained at a first pressure; and a second process of changing a pressure in the processing container to a second pressure higher than the first pressure.

公开(公告)号：US11854775B2

公开(公告)日：2023-12-26

申请号：US16744830

申请日：2020-01-16

Applicant: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY

Inventor： Timothy A. Grotjohn ,  Jes Asmussen

IPC: H01J37/32 ,  C23C16/511 ,  C23C16/27 ,  C23C16/52

CPC classification number: H01J37/3299 ,  H01J37/32311 ,  H01J37/32926 ,  H01J37/32935 ,  C23C16/274 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32238 ,  H01J37/32458 ,  H01J37/32715 ,  H01J37/32972

Abstract: The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated optical measurement system that enable microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond while measuring the local surface properties of the component while being grown. Related methods include deposition of the component, measurement of the local surface properties, and/or alteration of operating conditions during deposition in response to the local surface properties. As described in more detail below, the MPCR apparatus includes one or more electrically conductive, optically transparent regions forming part of the external boundary of its microwave chamber, thus permitting external optical interrogation of internal reactor conditions during deposition while providing a desired electrical microwave chamber to maintain selected microwave excitation modes therein.

公开(公告)号：US20230386791A1

公开(公告)日：2023-11-30

申请号：US18249552

申请日：2021-10-15

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Satoru KAWAKAMI

IPC: H01J37/32 ,  C23C16/511 ,  C23C16/44

CPC classification number: H01J37/32229 ,  H01J37/32311 ,  H01J37/3244 ,  H01J37/32357 ,  C23C16/511 ,  C23C16/4405 ,  H01J2237/332

Abstract: Disclosed is a plasma processing apparatus including a chamber and a waveguide structure. The waveguide structure is configured to propagate electromagnetic waves, which are VHF waves or UHF waves, in order to generate plasma within the chamber. The waveguide structure includes a resonator for electromagnetic waves. The resonator includes a first waveguide, a second waveguide, and a load impedance portion. The first waveguide has a first characteristic impedance. The second waveguide has a second characteristic impedance. The second waveguide is terminated at a short-circuit end having a ground potential. The load impedance portion is connected between the first waveguide and the second waveguide. The second characteristic impedance is greater than the first characteristic impedance.

公开(公告)号：US20230323529A1

公开(公告)日：2023-10-12

申请号：US18016328

申请日：2021-07-09

Applicant: RHEINISCH-WESTFÄLISCHE TECHNISCHE HOCHSCHULE (RWTH) AACHEN KÖRPERSCHAFT DES ÖFFENTLICHEN RECHTS

Inventor： Montgomery JARITZ

IPC: C23C16/04 ,  C23C16/511 ,  C23C16/52 ,  C23C16/40 ,  H01J37/32

CPC classification number: C23C16/045 ,  C23C16/511 ,  C23C16/52 ,  C23C16/401 ,  H01J37/32816 ,  H01J37/3266 ,  H01J37/32935 ,  H01J2237/1825 ,  H01J37/32192 ,  H01J2237/24578

Abstract: Apparatus and method for outer wall and/or inner wall coating of hollow bodies made of an electrically nonconductive material in which the hollow body is inserted into a process chamber which is divided by the hollow body into an internal and external reaction space, wherein at least one process gas is introduced into one of the two reaction spaces under a process pressure, and a plasma is generated in the reaction space and fragments and/or reaction products formed in the plasma from the at least one process gas are deposited to form a layer on the side of the wall of the hollow body that faces the plasma, the plasma being influenced with regard to at least one operating parameter by a magnetic field that permeates the two reaction spaces.

公开(公告)号：US11702749B2

公开(公告)日：2023-07-18

申请号：US16700046

申请日：2019-12-02

Applicant: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY

Inventor： Jes Asmussen ,  Jing Lu ,  Yajun Gu ,  Shreya Nad

IPC: C23C16/00 ,  C23C16/511 ,  C23C16/27 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/511 ,  C23C16/274 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32256 ,  H01J37/32926 ,  H01J2237/3321

Abstract: The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated tuning and process control methods that enable the microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond. Related methods enable the control of the microwave discharge position, size and shape, and enable efficient matching of the incident microwave power into the reactor prior to and during component deposition. Pre-deposition tuning processes provide a well matched reactor exhibiting a high plasma reactor coupling efficiency over a wide range of operating conditions, thus allowing operational input parameters to be modified during deposition while simultaneously maintaining the reactor in a well-matched state. Additional processes are directed to realtime process control during deposition, in particular based on identified independent process variables which can effectively control desired dependent process variables during deposition while still maintaining a well-matched power coupling reactor state.