公开(公告)号：US20080203354A1

公开(公告)日：2008-08-28

申请号：US12036686

申请日：2008-02-25

Applicant: Tetsuya KAMIMURA ,  Toshiyuki Saie ,  Masaru Yoshikawa

Inventor： Tetsuya KAMIMURA ,  Toshiyuki Saie ,  Masaru Yoshikawa

IPC: C09K13/00

CPC classification number: C23F3/00 ,  C09G1/02 ,  H01L21/3212

Abstract: The invention provides a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid comprising: a diquaternary ammonium cation; a corrosion inhibiting agent; and a colloidal silica, wherein the pH of the polishing liquid is in the range of 2.5 to 5.0. According to the invention, a polishing liquid capable of achieving a superior barrier layer polishing rate, as well as suppressing the occurrence of scratching due to the agglomeration of solid abrasive grains can be provided.

Abstract translation: 本发明提供了一种用于抛光半导体集成电路的阻挡层的抛光液，该抛光液包括：二季铵阳离子; 腐蚀抑制剂; 和胶体二氧化硅，其中抛光液的pH在2.5至5.0的范围内。 根据本发明，可以提供能够实现优异的阻挡层研磨速度的抛光液，以及抑制由于固体磨粒的凝聚而引起的刮擦的发生。