公开(公告)号：US12131944B2

公开(公告)日：2024-10-29

申请号：US17460929

申请日：2021-08-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Chun-Wei Hsu ,  Chih-Chieh Chang ,  Yi-Sheng Lin ,  Jian-Ci Lin ,  Jeng-Chi Lin ,  Ting-Hsun Chang ,  Liang-Guang Chen ,  Ji Cui ,  Kei-Wei Chen ,  Chi-Jen Liu

IPC: H01L21/768 ,  C09G1/02 ,  H01L23/522

CPC classification number: H01L21/7684 ,  C09G1/02 ,  H01L21/76877 ,  H01L23/5226

Abstract: A slurry composition, a semiconductor structure and a method for forming a semiconductor structure are provided. The slurry composition includes a slurry and a precipitant dispensed in the slurry. The semiconductor structure comprises a blocking layer including at least one element of the precipitant. The method includes using the slurry composition with the precipitant to polish a conductive layer and causing the precipitant to flow into the gap.

公开(公告)号：US20240343943A1

公开(公告)日：2024-10-17

申请号：US18684991

申请日：2022-07-29

Applicant: FUJIMI INCORPORATED

Inventor： Ryota Mae

IPC: C09G1/02 ,  H01L21/3105

CPC classification number: C09G1/02 ,  H01L21/31053

Abstract: There are provided a polishing composition capable of increasing the polishing removal rate of silicon nitride, a polishing composition production method, a polishing method, and a semiconductor substrate production method. The polishing composition contains abrasives having a zeta potential of −5 mV or less and a cationic surfactant.

公开(公告)号：US20240336809A1

公开(公告)日：2024-10-10

申请号：US18294859

申请日：2022-08-03

Applicant: Resonac Corporation

Inventor： Yasushi KURATA ,  Tomohiro IWANO ,  Taira ONUMA ,  Shigeki KUBOTA ,  Makoto MIZUTANI ,  Noriaki MURAKAMI ,  Masahiro KANNO

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/3105

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/31053

Abstract: A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, the additive includes (A1) a 4-pyrone-based compound represented by General Formula (1) below and (B) a saturated monocarboxylic acid, and a pH is more than 4.0. A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, the additive includes (A2) picolinic acid and (B) a saturated monocarboxylic acid, and a pH is more than 4.0.






[in the formula, X11, X12, and X13 are each independently a hydrogen atom or a monovalent substituent.]

公开(公告)号：US12104087B2

公开(公告)日：2024-10-01

申请号：US17775887

申请日：2020-10-12

Applicant: JSR CORPORATION

Inventor： Yuuya Yamada ,  Pengyu Wang ,  Norihiko Sugie ,  Yasutaka Kamei

IPC: C09G1/02 ,  C09K3/14 ,  C09K13/00 ,  H01L21/321 ,  H01L21/768

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K13/00 ,  H01L21/3212 ,  H01L21/7684

Abstract: Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well as reducing surface defects after polishing. The composition for chemical-mechanical polishing contains (A) silica particles having a functional group represented by general formula (1) and (B) a silane compound. —COO-M+ . . . (1) (M+ represents a monovalent cation.)

公开(公告)号：US20240318038A1

公开(公告)日：2024-09-26

申请号：US18610982

申请日：2024-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghwa Lee ,  Yearin Byun ,  Inkwon Kim

IPC: C09G1/02 ,  C07F5/00 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/321

CPC classification number: C09G1/02 ,  C07F5/003 ,  C09K3/1409 ,  H01L21/31053 ,  H01L21/3212

Abstract: Provided are a method of manufacturing a chemical mechanical polishing slurry and a method of manufacturing a semiconductor device using the same. The method of manufacturing a chemical mechanical polishing slurry includes mixing a first precursor including cerium and a second precursor in an aqueous solution, forming nanoclusters including cerium by a reaction (e.g., a synthesis reaction) between the first precursor and the second precursor, and forming a chemical mechanical polishing slurry by mixing at least one of a pH adjuster, deionized water, an inhibitor, a booster, and a dispersant with the nanoclusters.

公开(公告)号：US20240297049A1

公开(公告)日：2024-09-05

申请号：US17754771

申请日：2020-10-21

Applicant: Versum Materials US, LLC

Inventor： Joseph D. Rose ,  Hongjun Zhou ,  Xiaobo Shi ,  Krishna P. Murella

IPC: H01L21/3105 ,  B24B7/22 ,  C09G1/02

CPC classification number: H01L21/31053 ,  C09G1/02 ,  B24B7/228

Abstract: Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions 5 contain ceria coated inorganic oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the group consisting of nitrogen containing organic aromatic or pyridine ring molecule with one carboxylic acid group, one carboxy late salt group, or one carboxy late ester group at position −2, −3, or −4 respectively; non-ionic organic molecule with multi hydroxyl functional groups; and 10 combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.

公开(公告)号：US12077680B2

公开(公告)日：2024-09-03

申请号：US17197246

申请日：2021-03-10

Applicant: FUJIMI INCORPORATED

Inventor： Akiko Soumiya

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: The present invention is to provide means for polishing an object to be polished containing titanium nitride at a high polishing speed. The present invention relates to a polishing composition containing silica particles and a polishing accelerator, wherein the polishing accelerator is a compound having an aromatic heterocyclic ring and an OH group or a group of a salt thereof directly bonded to the aromatic heterocyclic ring, or a compound having an aromatic hydrocarbon ring, an OH group or a group of a salt thereof directly bonded to the aromatic hydrocarbon ring, and a COOH group or a group of a salt thereof directly bonded to the aromatic hydrocarbon ring, and the polishing composition is used for polishing an object to be polished containing titanium nitride.

公开(公告)号：US20240218207A1

公开(公告)日：2024-07-04

申请号：US18397609

申请日：2023-12-27

Applicant: TSUNG HAN TSAI

Inventor： TSUNG HAN TSAI

IPC: C09G1/02 ,  C09G1/12

CPC classification number: C09G1/02 ,  C09G1/12

Abstract: A mixture with a waxing and polishing effect, mainly composed of the following components: 15-30% by weight of wax; 25-45% by weight of colloidal resin; 2-5% by weight of glycerin; 15-30% by weight % of abrasives. The mixture can be fixed on a sponge, foam or a fiber cloth to remove industrial dust, sand, solid particles, asphalt, spray paint smoke and other attachments on the paint of cars, motorcycles or bicycles, glass or metal surfaces, and can be It has a waxing and polishing effect on the car, motorcycle or bicycle paint, glass or metal surface (forming a bright and smooth surface).

公开(公告)号：US12024650B2

公开(公告)日：2024-07-02

申请号：US17509177

申请日：2021-10-25

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Qingmin Cheng ,  Bin Hu ,  Yannan Liang ,  Hyosang Lee ,  Liqing Wen ,  Yibin Zhang ,  Abhudaya Mishra

IPC: C09G1/02 ,  C09K13/00 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K13/00 ,  H01L21/3212

Abstract: This disclosure relates polishing compositions that include (1) at least one abrasive; (2) at least one organic acid or a salt thereof; (3) at least one first amine compound, the at least one first amine compound including an alkylamine having a 6-24 carbon alkyl chain; (4) at least one second amine compound containing at least two nitrogen atoms, the second amine compound being different from the first amine compound; and (5) an aqueous solvent.

公开(公告)号：US20240199916A1

公开(公告)日：2024-06-20

申请号：US18519537

申请日：2023-11-27

Applicant: Hannam University Industry Academy Cooperation Foundation ,  MS Materials Co., Ltd.

Inventor： Woon Jung KIM ,  Yang Hoon JI

IPC: C09G1/02

CPC classification number: C09G1/02 ,  H01L21/30625

Abstract: The invention relates to a polishing slurry composition, and more specifically, relates to a polishing slurry composition that has excellent thermal stability, dispersion stability, stability over time, and polishing efficiency compared to conventional polishing slurry compositions, and can minimize scratches on the surface to be polished. The polishing slurry composition of the present invention has excellent thermal stability, dispersion stability, stability over time, and polishing efficiency, so it can be widely used in fields such as abrasives for semiconductor wafer processing, biomedical, pharmaceutical, cosmetics, and catalysts.