公开(公告)号：US20240018664A1

公开(公告)日：2024-01-18

申请号：US17605550

申请日：2021-07-28

申请人： CHANGXIN MEMORY TECHNOLOGIES, INC.

发明人： Denghui WU

IPC分类号： C23F3/00 ,  G01N21/57

CPC分类号： C23F3/00 ,  G01N21/57

摘要： A method for controlling a surface glossiness of a metal workpiece includes: providing a metal workpiece; detecting the surface glossiness of the metal workpiece to obtain a first detection value; and, treating the metal workpiece by different processes according to different first detection values so that the surface glossiness of the metal workpiece satisfies the production requirements.

公开(公告)号：US11732366B2

公开(公告)日：2023-08-22

申请号：US16077976

申请日：2017-02-15

申请人： REM TECHNOLOGIES, INC.

发明人： Agustin Diaz ,  Gary J. Sroka

IPC分类号： C23F1/14 ,  C23F3/00 ,  B33Y40/20 ,  C09G1/02 ,  C09K3/14 ,  B23H9/00 ,  B33Y80/00

CPC分类号： C23F3/00 ,  B33Y40/20 ,  C09G1/02 ,  C09K3/1463 ,  B23H9/001 ,  B23P2700/06 ,  B33Y80/00

摘要： A method for chemical processing an internal cavity of an additive manufactured (AM) metal workpiece is disclosed in which a connector is provided in fluid connection with the internal cavity and a chemical polishing solution is flowed through the connector and the internal cavity to process the internal cavity to a desired finish.

公开(公告)号：US20170253766A1

公开(公告)日：2017-09-07

申请号：US15176162

申请日：2016-06-08

申请人： UWIZ Technology Co., Ltd.

发明人： Yun-Lung Ho ,  Chung-Wei Chiang ,  Song-Yuan Chang ,  Ming-Hui Lu ,  Ming-Che Ho

IPC分类号： C09G1/02 ,  B24B37/24 ,  C23F3/00

CPC分类号： C09G1/02 ,  B24B37/24 ,  C23F3/00 ,  C23F3/06 ,  H01L21/3212

摘要： Provided is a slurry composition including abrasive particles, halogen oxide, and nitroxide compound. The combination of halogen oxide and nitroxide compound has a synergistic effect to remove a substrate containing tungsten and silicon oxide. Moreover, a use of the slurry composition and a polishing method using the slurry composition are provided.

公开(公告)号：US20170072530A1

公开(公告)日：2017-03-16

申请号：US15341130

申请日：2016-11-02

申请人： SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

发明人： RAJIV K. SINGH ,  KANNAN BALASUNDARAM ,  ARUL CHAKKARAVARTHI ARJUNAN ,  DEEPIKA SINGH ,  WEI BAI

IPC分类号： B24B37/20 ,  C09G1/02 ,  C23F3/00

CPC分类号： B24B37/20 ,  C09G1/02 ,  C09G1/04 ,  C23F3/00

摘要： A CMP method uses a slurry including colloidal metal oxide or colloidal semiconductor oxide particles (colloidal particles) in water. At least one particle feature is selected from (i) the colloidal particles having a polydispersity >30%, and (ii) mixed particle types including the colloidal particles having an average primary size >50 nm mixed with fumed oxide particles having average primary size

摘要翻译： CMP方法使用包含胶体金属氧化物或胶态半导体氧化物颗粒（胶体颗粒）在水中的浆料。 从（i）多分散性> 30％的胶体粒子中选择至少一种粒子特征，和（ii）包含具有平均初级粒径> 50nm的胶体粒子的混合粒子类型与平均一次粒径< 25nm。 将具有氧化铝表面的基板放入CMP设备中，并用旋转抛光垫和浆料进行CMP以抛光氧化铝表面。 多分散性通过多分散性公式确定，其分布宽度（w）涉及第二较大粒径的宽度w1和宽度w2。 多分散性公式=（w2-w1）×100 / dav，其含有体积和天数的胶体粒子的总量的63％是胶体粒子的平均粒径。

公开(公告)号：US09551075B2

公开(公告)日：2017-01-24

申请号：US14450885

申请日：2014-08-04

申请人： SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

发明人： Rajiv K. Singh ,  Kannan Balasundaram ,  Arul Chakkaravarthi Arjunan ,  Deepika Singh ,  Wei Bai

IPC分类号： C23F3/00 ,  C09G1/04 ,  C09G1/02

CPC分类号： B24B37/20 ,  C09G1/02 ,  C09G1/04 ,  C23F3/00

摘要： A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity >30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxide particles, (iv) first oxide particles with average primary size >50 nm mixed with fumed oxide particles having average primary size 150 m2/gm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface.

摘要翻译： CMP方法使用在水中包含第一金属氧化物或半导体氧化物颗粒（第一氧化物颗粒）的浆料。 至少一个颗粒特征选自（i）具有多分散性> 30％的第一氧化物颗粒，（ii）包括第一或第II族离子的第一氧化物颗粒上的涂层，过渡金属氧化物或有机材料，（iii）第一 与煅制氧化物颗粒混合的氧化物颗粒，（iv）平均初级尺寸> 50nm的第一氧化物颗粒与平均初级尺寸<25nm的热解氧化物颗粒混合，和（v）每单位面积的每个表面积的第一氧化物颗粒< 100m 2 / gm与具有平均每单位面积重量> 150m 2 / gm的另一种氧化物颗粒混合。 将具有氧化铝表面的基板放入CMP设备中，并用旋转抛光垫和浆料进行CMP以抛光氧化铝表面。

公开(公告)号：US20160311073A1

公开(公告)日：2016-10-27

申请号：US15181694

申请日：2016-06-14

申请人： Mani, Inc.

发明人： Masahiko Saito

IPC分类号： B23P15/28 ,  C25F3/24 ,  A61F9/013 ,  C23F3/00 ,  B24B3/60 ,  A61B17/3211

CPC分类号： B23P15/28 ,  A61B17/3211 ,  A61B2017/00526 ,  A61F9/0133 ,  B24B3/605 ,  C23F3/00 ,  C25F3/24

摘要： A method of manufacturing a straight knife includes pressing one end of a rounded austenitic stainless steel rod flat and press-cutting away an excess portion of the flattened end to form a blade; grinding the blade to form a slanted surface and an edge along at least a portion of the periphery of the blade; removing burrs along the slanted surface and the edge of the blade by electrolytic polishing or chemical polishing; and continuing with the electrolytic polishing or chemical polishing to form, at a tip of the slanted surface, a cutting portion of the blade having a cross-sectional shape defined by convex curves.

摘要翻译： 制造直刀的方法包括：将圆形奥氏体不锈钢棒的一端压扁，并且将切割出的多余部分压平，形成刀片; 研磨刀片以形成沿叶片周边的至少一部分的倾斜表面和边缘; 通过电解抛光或化学抛光去除沿着倾斜表面和刀片边缘的毛刺; 并且继续进行电解抛光或化学抛光以在倾斜表面的尖端处形成具有由凸曲线限定的横截面形状的刀片的切割部分。

公开(公告)号：US09443739B2

公开(公告)日：2016-09-13

申请号：US14236539

申请日：2012-07-30

申请人： Bastian Marten Noller ,  Bettina Drescher ,  Christophe Gillot ,  Yuzhuo Li ,  Ning Gao

发明人： Bastian Marten Noller ,  Bettina Drescher ,  Christophe Gillot ,  Yuzhuo Li

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  C03C15/00 ,  C03C25/68 ,  H01L21/306 ,  H01L21/321 ,  H01L21/3105 ,  C23F3/00 ,  C09K3/14 ,  C09G1/02 ,  H01L21/02

CPC分类号： H01L21/30625 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/02024 ,  H01L21/31053 ,  H01L21/3212

摘要： A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material with 0.1≦x

公开(公告)号：US20160153095A1

公开(公告)日：2016-06-02

申请号：US15018327

申请日：2016-02-08

申请人： FUJIMI INCORPORATED

发明人： Yukinobu YOSHIZAKI

IPC分类号： C23F1/16 ,  C23F3/00 ,  C09G1/04

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1436 ,  C23F1/16 ,  C23F3/00 ,  C23F3/04 ,  H01L21/30625

摘要： To provide a means by which polishing rate can further be improved in a polishing composition to be used for an application of polishing an object to be polished containing a metal element or a semimetal element. Oxo acid containing a metal element or a semimetal element, and water are contained in a polishing composition to be used for an application of polishing an object to be polished containing a metal element or a semimetal element.

公开(公告)号：US09334422B2

公开(公告)日：2016-05-10

申请号：US14601011

申请日：2015-01-20

申请人： General Engineering & Research, L.L.C.

发明人： Robin Ihnfeldt

IPC分类号： C09G1/02 ,  H01L21/306 ,  H01L21/321 ,  B24B1/00 ,  C09K3/14 ,  C09K13/00 ,  C09K13/06 ,  C08K9/10 ,  C09G1/00 ,  C09G1/04 ,  C08K9/00 ,  C09C1/02 ,  H01L21/768 ,  B01J13/14 ,  C09C1/30 ,  C23F3/00

CPC分类号： C09G1/02 ,  B01J13/14 ,  B24B1/00 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/14 ,  C01P2006/16 ,  C08K9/00 ,  C08K9/10 ,  C09C1/02 ,  C09C1/3063 ,  C09G1/00 ,  C09G1/04 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/00 ,  C09K13/06 ,  C23F3/00 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/7684

摘要： The invention relates to a contact release capsule comprising a particle, a chemical payload, and a polymer coating, wherein the particle is impregnated with the chemical payload, and the chemical payload is held inside the particle by the polymer coating until the contact release capsule contacts a surface and a shearing force removes the polymer coating allowing the chemical payload to release outside the particle. The contact release capsule is useful in chemical mechanical planarization slurries. Particularly, the contact release capsule may comprise a glycine impregnated silica nanoparticle coated with a polymer, wherein the contact release capsule is dispersed in an aqueous solution and used in the copper chemical mechanical planarization process. Use of the contact release capsule in a slurry for copper chemical mechanical planarization may significantly improve planarization efficiency, decrease unwanted etching and corrosion, and improve dispersion stability.

公开(公告)号：US09103027B2

公开(公告)日：2015-08-11

申请号：US14562918

申请日：2014-12-08

申请人： Accu-Labs, Inc.

发明人： Peter Tremmel ,  Orville Broch ,  Stephen Brent Cornwell

IPC分类号： C23C18/16 ,  C23C18/34 ,  C23C18/36 ,  B65D81/32 ,  C09K13/00

CPC分类号： C23C18/36 ,  B65D81/32 ,  C09G1/02 ,  C09K13/00 ,  C23C18/1617 ,  C23C18/1633 ,  C23C18/34 ,  C23C18/50 ,  C23F3/00 ,  C25D3/12

摘要： Disclosed are various methods, kits, and compositions in the field of electroless nickel plating and chemical polishing. An electroless nickel plating composition may include a surfactant-brightener; a coupler; a bismuth metallic stabilizer; and organosulfur stabilizer and a bismuth complexer. Prior to plating, a substrate may be polished with a polishing composition that includes a surface blocker and a surface leveler. When practiced in accordance with the preferred teachings described herein, the electroless nickel plating composition is capable of providing a mirror-bright, lustrous finish, and has good leveling properties. The composition may be made without lead or cadmium.