公开(公告)号：US4341592A

公开(公告)日：1982-07-27

申请号：US601861

申请日：1975-08-04

Applicant: Samuel R. Shortes ,  Thomas C. Penn

Inventor： Samuel R. Shortes ,  Thomas C. Penn

IPC: H01L21/302 ,  G03F7/42 ,  H01L21/027 ,  H01L21/30 ,  H01L21/3065 ,  H01L21/311 ,  B44C1/22 ,  C03C15/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/31138 ,  G03F7/42

Abstract: Method and apparatus for removing a photoresist layer from a substrate surface of different material, such as a semiconductor slice, in the fabrication of an electronic structure, involving exposure of the photoresist layer to an ozone-containing gaseous atmosphere in a reaction zone of a reactor. The ozone is present as an active reagent in the gaseous atmosphere to which the layer of photoresist material is exposed in an amount sufficient to react with all of the photoresist material in the layer thereof, with the photoresist material being removed from the underlying substrate surface in response to its exposure to the ozone. The photoresist material being treated by the ozone for stripping thereof may be either a negative or positive photoresist. Gaseous reaction products resulting from treatment of the substrate and removal of the photoresist layer therefrom are directed through an ozone reduction chamber prior to the discharge of the exhaust gases created by the reaction of the ozone with the photoresist material, wherein any excess ozone contained in the exhaust gases is reduced to molecular oxygen.

Abstract translation: 用于在电子结构的制造中从不同材料（例如半导体片）的衬底表面去除光致抗蚀剂层的方法和装置，包括在反应器的反应区中将光致抗蚀剂层暴露于含臭氧的气态气氛 。 臭氧作为活性试剂存在于气态气氛中，光致抗蚀剂材料层以足以与其中的所有光致抗蚀剂材料反应的量暴露于光致抗蚀剂材料层，光致抗蚀剂材料从下面的基底表面被去除 对其暴露于臭氧的反应。 被臭氧处理以除去的光致抗蚀剂材料可以是负性或正性光致抗蚀剂。 通过处理基材和从其中除去光致抗蚀剂层而产生的气态反应产物在通过臭氧与光致抗蚀剂材料的反应产生的废气排出之前通过臭氧还原室引导，其中包含在 废气被还原成分子氧。