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公开(公告)号:US06770977B2
公开(公告)日:2004-08-03
申请号:US10036388
申请日:2002-01-07
申请人: Takenobu Kishida , Shinya Tada , Atsushi Ikeda , Takeshi Harada , Kohei Sugihara
发明人: Takenobu Kishida , Shinya Tada , Atsushi Ikeda , Takeshi Harada , Kohei Sugihara
IPC分类号: H01L2348
CPC分类号: H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要: A barrier layer is formed on an insulating or conducting film provided on a semiconductor substrate, and an electrode or an interconnect made from a conducting film is formed on the barrier layer. The barrier layer includes a tantalum film having the &bgr;-crystal structure.
摘要翻译: 在设置在半导体衬底上的绝缘或导电膜上形成阻挡层,并且在阻挡层上形成由导电膜制成的电极或互连。 阻挡层包括具有β-晶体结构的钽膜。
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公开(公告)号:US20120087653A1
公开(公告)日:2012-04-12
申请号:US13378055
申请日:2010-03-08
CPC分类号: H04B10/516 , H04B10/5051
摘要: An optical transmission apparatus in which, even if a change is made in the bit rate of modulation signals that are inputted to a plurality of optical modulating units, the modulation signals do not suffer from phase shifting, thereby enabling achieving synchronous modulation in the plurality of optical modulating units and enabling achieving a high optical signal quality. The optical transmission apparatus includes: a plurality of optical modulating units that modulate light on the basis of modulation signals; and a delay amount control unit that, based on bit rate information indicating a bit rate of the modulation signals, controls delay amounts of the modulation signals to be inputted to the plurality of optical modulating units, such that the light is modulated in a synchronous manner in the plurality of optical modulating units.
摘要翻译: 其中,即使在输入到多个光调制单元的调制信号的比特率中发生变化,调制信号也不会遭受相移,从而能够实现多个调制信号的同步调制 光调制单元,实现高光信号质量。 光传输装置包括:多个光调制单元,其基于调制信号调制光; 以及延迟量控制单元,其基于表示调制信号的比特率的比特率信息,控制要输入到多个光调制单元的调制信号的延迟量,使得以同步方式调制光 在多个光学调制单元中。
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公开(公告)号:US06780723B2
公开(公告)日:2004-08-24
申请号:US10243742
申请日:2002-09-16
申请人: Kohei Sugihara , Hirokazu Sayama
发明人: Kohei Sugihara , Hirokazu Sayama
IPC分类号: H01L21336
摘要: When a dummy sidewall and source and drain regions are once formed and then the dummy sidewall is removed to extend the source and drain regions, the removal of the dummy sidewall is performed after formation of a protective oxide film on a gate electrode and on the major surfaces of the source and drain regions. This efficiently prevents conventional surface roughness of the upper surface of the gate electrode and the impurity region due to the removal of the dummy sidewall.
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