Method for dicing a diced optoelectronic semiconductor wafer
    11.
    发明授权
    Method for dicing a diced optoelectronic semiconductor wafer 有权
    用于切割切割的光电半导体晶片的方法

    公开(公告)号:US08143081B2

    公开(公告)日:2012-03-27

    申请号:US11706822

    申请日:2007-02-13

    IPC分类号: H01L21/00

    摘要: A method for dicing an optoelectronic semiconductor wafer has steps of preparing an optoelectronic semiconductor wafer, laser scribing, diamond saw dicing and forming optoelectronic semiconductor dies. A product for dicing an optoelectronic semiconductor wafer has a substrate and an epitaxial layer. The substrate has a first surface, a second surface and two rough surfaces. The rough surfaces are formed by laser scribing the wafer to define multiple guide grooves on the wafer and diamond saw grooving the wafer along the guide grooves. The epitaxial layer is formed epitaxially on the first surface of the substrate.

    摘要翻译: 用于切割光电半导体晶片的方法具有制备光电子半导体晶片,激光划线,金刚石锯切割和形成光电子半导体管芯的步骤。 用于切割光电半导体晶片的产品具有基板和外延层。 基板具有第一表面,第二表面和两个粗糙表面。 粗糙表面通过激光​​划片晶片形成,以在晶片上限定多个引导槽,并且金刚石锯沿着引导槽切割晶片。 在衬底的第一表面上外延地形成外延层。