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    HIGH-BRIGHTNESS LIGHT EMITTING DIODE
    1.
    发明申请
    HIGH-BRIGHTNESS LIGHT EMITTING DIODE 有权
    高亮度发光二极管

    公开(公告)号：US20120049234A1

    公开(公告)日：2012-03-01

    申请号：US12943918

    申请日：2010-11-10

    Applicant: Chih-Ching Cheng

    Inventor： Chih-Ching Cheng

    IPC: H01L33/42 ,  H01L33/46

    CPC classification number: H01L33/38 ,  H01L33/08 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0016

    Abstract: A light-emitting diode includes a substrate, a first semiconductor layer above the substrate, an active layer above the first semiconductor layer, a second semiconductor layer above the active layer, a trench penetrating the second semiconductor layer and the active layer thereby exposing a portion of the first semiconductor layer, an first electrode disposed at the bottom of the trench, an insulating layer covering the trench and the first electrode, and a second electrode disposed overlying the insulating layer in parallel with the first electrode, wherein the second electrode overlaps with the first electrode.

    Abstract translation: 发光二极管包括衬底，衬底上的第一半导体层，第一半导体层上方的有源层，有源层上方的第二半导体层，穿透第二半导体层和有源层的沟槽，从而暴露部分 所述第一半导体层的第一电极，设置在所述沟槽的底部的第一电极，覆盖所述沟槽和所述第一电极的绝缘层和与所述第一电极平行地设置在所述绝缘层上的第二电极，其中所述第二电极与 第一个电极。

    SEMICONDUCTOR DEVICES
    2.
    发明申请
    SEMICONDUCTOR DEVICES 有权
    半导体器件

    公开(公告)号：US20110233582A1

    公开(公告)日：2011-09-29

    申请号：US12732537

    申请日：2010-03-26

    Applicant: Chih Ching Cheng ,  Ching Wen Tung

    Inventor： Chih Ching Cheng ,  Ching Wen Tung

    IPC: H01L33/58 ,  H01L33/62

    CPC classification number: H01L33/20 ,  H01L33/007 ,  H01L33/16

    Abstract: A semiconductor device includes a substrate and an epitaxy layer positioned on the substrate. In one embodiment of the present disclosure, the substrate includes an upper surface and a plurality of bumps positioned on the upper surface, and each of the bumps includes a top plane substantially parallel to the upper surface and a plurality of wall surfaces between the top plane and the upper surface. In one embodiment of the present disclosure, the epitaxy layer has the same crystal orientation on the upper surface of the substrate and the wall surfaces of the bumps to reduce defect density and increase protection from electrostatic discharge.

    Abstract translation: 半导体器件包括衬底和位于衬底上的外延层。 在本公开的一个实施例中，基板包括位于上表面上的上表面和多个凸起，并且每个凸块包括基本上平行于上表面的顶平面和顶平面之间的多个壁面 和上表面。 在本公开的一个实施例中，外延层在基板的上表面和凸块的壁表面上具有相同的晶体取向，以减少缺陷密度并增加对静电放电的保护。

    WAFER CARRIER AND EPITAXY MACHINE USING THE SAME
    3.
    发明申请
    WAFER CARRIER AND EPITAXY MACHINE USING THE SAME 审中-公开
    使用它的波浪载体和外延机

    公开(公告)号：US20100101496A1

    公开(公告)日：2010-04-29

    申请号：US12648849

    申请日：2009-12-29

    Applicant: CHIH CHING CHENG ,  TZONG-LIANG TSAI

    Inventor： CHIH CHING CHENG ,  TZONG-LIANG TSAI

    IPC: C23C16/00

    CPC classification number: C23C16/4585 ,  C30B25/12

    Abstract: A wafer carrier comprises a base and a shielding plate positioned on the top surface of the base in a disassembled manner. The top surface of the base is configured to retain a plurality of wafers, and the shielding plate has a plurality of openings exposing the wafers. In particular, the shielding plate shields one portion of the base other than the other portions occupied by the wafers to prevent the reaction gases from conducting the chemical reaction to generate the reactant directly on the surface of the base. Consequently, the base is isolated from the chemical reaction, and it is not necessary to replace the base before conducting the next fabrication process or to clean the reactants on the surface of the base by thermal baking or etching.

    Abstract translation: 晶片载体包括基部和屏蔽板，其以拆卸的方式定位在基部的顶表面上。 基座的顶表面构造成保持多个晶片，并且屏蔽板具有暴露晶片的多个开口。 特别地，屏蔽板屏蔽除了晶片占据的其它部分之外的基底的一部分，以防止反应气体进行化学反应，直接在基底的表面上产生反应物。 因此，基底与化学反应隔离，在进行下一个制造工艺之前不需要更换基底，也不需要通过热烘烤或蚀刻来清洁基底表面上的反应物。

    Substrate for fabricating light emitting device and light emitting device fabricated therefrom
    4.
    发明申请
    Substrate for fabricating light emitting device and light emitting device fabricated therefrom 审中-公开
    用于制造发光器件的基板和由其制造的发光器件

    公开(公告)号：US20100006862A1

    公开(公告)日：2010-01-14

    申请号：US12453409

    申请日：2009-05-11

    Applicant: Chih-Ching Cheng

    Inventor： Chih-Ching Cheng

    IPC: H01L33/00 ,  B32B3/00

    CPC classification number: H01L33/22 ,  H01L33/16 ,  Y10T428/24479

    Abstract: The invention provides a substrate for fabricating a light emitting device and the light emitting device fabricated therefrom. The substrate includes at least one platform region having a first facet direction for epitaxial growth; and a plurality of continuous protruded portions surrounding the at least one platform region to isolate the at least one platform region from another platform region, wherein the first facet direction is substantially excluded from facet directions of the plurality of continuous protruded portions. Since facet directions of the plurality of continuous protruded portions substantially do not include the first facet direction, during formation of the light emitting device, epitaxial growth is mainly conducted on the at least one platform region, which may prevent epitaxial defects from generating and enhance external quantum efficiency of the light emitting device.

    Abstract translation: 本发明提供一种用于制造发光器件的衬底和由其制造的发光器件。 衬底包括具有用于外延生长的第一小面方向的至少一个平台区域; 以及围绕所述至少一个平台区域的多个连续突出部分，以将所述至少一个平台区域与另一个平台区域隔离，其中所述第一小面方向基本上从所述多个连续突出部分的小平面方向排除。 由于多个连续突出部分的面方向基本上不包括第一小面方向，所以在形成发光器件期间，外延生长主要在至少一个平台区域上进行，这可以防止外延缺陷产生和增强外部 发光器件的量子效率。

    Baby walker speed control caster
    6.
    发明授权
    Baby walker speed control caster 失效
    宝宝步行者速度控制脚轮

    公开(公告)号：US06374954B1

    公开(公告)日：2002-04-23

    申请号：US09736203

    申请日：2000-12-15

    Applicant: Chih-ching Cheng

    Inventor： Chih-ching Cheng

    IPC: B60B3300

    CPC classification number: B60B33/0028 ,  A47D13/043 ,  B60B33/0042 ,  B60B33/0049 ,  B60B33/0057 ,  B60B33/0068 ,  B60B33/0073 ,  B60B33/0094 ,  B60B33/021

    Abstract: A baby walker speed control caster. The speed control caster includes an axle piece, a pair of wheels symmetrically provided at either side of the axle piece, and a ball. The axle piece is provided with a pivot hole, a through hole, and a pivot shaft. Each wheel is formed in a thickness radially increasing respectively from the adjacency of the wheel center and is provided with a pivot hole at the center and a plurality of embossing curves at the inner side; in this way, the wheels are pivotably connected to each other by a pivot axle passing through the pivot holes of the wheels and the axle piece sandwiched between the wheels such that a chamber, containing the ball, is formed by the through hole of the axle piece and the inner walls of the wheels and the width between two inner walls increases radially from the adjacency of the wheel center. As the baby walker moves faster, the ball is squeezed between two inner walls of the wheels when the ball is swept toward the far side of the chamber by the embossing curves, thus producing a remarkable brake effect due to the friction between the axle piece and the wheels via the ball.

    Abstract translation: 婴儿步行速度控制脚轮。 速度控制脚轮包括轴件，对称地设置在车轴件两侧的一对车轮和一个球。 轴件设置有枢轴孔，通孔和枢轴。 每个轮分别形成为从车轮中心的邻接处径向增加的厚度，并且在中心处设置有枢转孔和在内侧具有多个压花曲线; 以这种方式，车轮通过枢转轴线可枢转地连接，所述枢转轴通过车轮的枢转孔和夹在车轮之间的轴件，使得容纳球的腔室由轴的通孔形成 车轮的内壁和两个内壁之间的宽度从车轮中心的相邻处径向增加。 当宝宝步行者移动得更快时，当球通过压花曲线向球体的远侧扫掠时，球被挤在车轮的两个内壁之间，由此产生明显的制动效果，这是由于轴件和 车轮通过球。

    Epi-structure with uneven multi-quantum well and the method thereof
    7.
    发明申请
    Epi-structure with uneven multi-quantum well and the method thereof 有权
    具有不均匀多量子阱的Epi结构及其方法

    公开(公告)号：US20080191190A1

    公开(公告)日：2008-08-14

    申请号：US11798750

    申请日：2007-05-16

    Applicant: Tzong-Liang Tsai ,  Chih-Ching Cheng

    Inventor： Tzong-Liang Tsai ,  Chih-Ching Cheng

    IPC: H01L33/00

    CPC classification number: H01L33/24 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34333 ,  H01S2304/04

    Abstract: An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with Multi-Quantum Well (MQW); and a second semiconductor conductive layer forming on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven Multi-Quantum Well.

    Abstract translation: 发光装置的Epi结构，包括：在基板上形成的第一半导体导电层; 在具有多量子阱（MQW）的第一半导体导电层上形成的有源层; 以及形成在所述有源层上的第二半导体导电层; 其中由至少一种异质材料形成的多个颗粒在第一半导体导电层和活性层之间被散射，以形成不均匀的多量子阱。

    Semiconductor devices
    10.
    发明授权
    Semiconductor devices 有权
    半导体器件

    公开(公告)号：US08258531B2

    公开(公告)日：2012-09-04

    申请号：US12732537

    申请日：2010-03-26

    Applicant: Chih Ching Cheng ,  Ching Wen Tung

    Inventor： Chih Ching Cheng ,  Ching Wen Tung

    IPC: H01L33/00

    CPC classification number: H01L33/20 ,  H01L33/007 ,  H01L33/16

    Abstract: A semiconductor device includes a substrate and an epitaxy layer positioned on the substrate. In one embodiment of the present disclosure, the substrate includes an upper surface and a plurality of bumps positioned on the upper surface, and each of the bumps includes a top plane substantially parallel to the upper surface and a plurality of wall surfaces between the top plane and the upper surface. In one embodiment of the present disclosure, the epitaxy layer has the same crystal orientation on the upper surface of the substrate and the wall surfaces of the bumps to reduce defect density and increase protection from electrostatic discharge.

    Abstract translation: 半导体器件包括衬底和位于衬底上的外延层。 在本公开的一个实施例中，基板包括位于上表面上的上表面和多个凸起，并且每个凸块包括基本上平行于上表面的顶平面和顶平面之间的多个壁面 和上表面。 在本公开的一个实施例中，外延层在基板的上表面和凸块的壁表面上具有相同的晶体取向，以减少缺陷密度并增加对静电放电的保护。

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