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公开(公告)号：US11094900B2
公开(公告)日：2021-08-17
申请号：US16241997
申请日：2019-01-08
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Da-Jun Lin , Bin-Siang Tsai , Chin-Chia Yang
Abstract: A method for fabricating semiconductor device includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer; performing a treatment process to rough a top surface of the first metal interconnection; and forming a carbon nanotube (CNT) junction on the first metal interconnection. Preferably, the treatment process further includes forming protrusions on the top surface of the first metal interconnection, in which the protrusions and the first metal interconnection comprise same material.
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公开(公告)号：US20200185629A1
公开(公告)日：2020-06-11
申请号：US16241997
申请日：2019-01-08
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Da-Jun Lin , Bin-Siang Tsai , Chin-Chia Yang
Abstract: A method for fabricating semiconductor device includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer; performing a treatment process to rough a top surface of the first metal interconnection; and forming a carbon nanotube (CNT) junction on the first metal interconnection. Preferably, the treatment process further includes forming protrusions on the top surface of the first metal interconnection, in which the protrusions and the first metal interconnection comprise same material.
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