公开(公告)号：US20150243754A1

公开(公告)日：2015-08-27

申请号：US14187701

申请日：2014-02-24

Applicant: United Microelectronics Corp.

Inventor： Hung-Yi Wu ,  Chien-Ming Lai ,  Yi-Wen Chen

IPC: H01L29/49 ,  H01L29/40

CPC classification number: H01L29/4966 ,  H01L29/401 ,  H01L29/4983 ,  H01L29/66545 ,  H01L29/78

Abstract: A semiconductor structure and a manufacturing method thereof are disclosed. The semiconductor structure includes an isolation layer, a gate dielectric layer, a first work function metal, a first bottom barrier layer, a second work function metal, and a first top barrier layer. The isolation layer is formed on a substrate and has a first gate trench. The gate dielectric layer is formed in the first gate trench. The first work function metal is formed on the gate dielectric layer in the first gate trench. The first bottom barrier layer is formed on the first work function metal. The second work function metal is formed on the first bottom barrier layer. The first top barrier layer is formed on the second work function metal.

Abstract translation: 公开了一种半导体结构及其制造方法。 半导体结构包括隔离层，栅介质层，第一功函数金属，第一底阻挡层，第二功函数金属和第一顶阻挡层。 隔离层形成在衬底上并具有第一栅极沟槽。 栅介质层形成在第一栅极沟槽中。 第一功函数金属形成在第一栅极沟槽中的栅介质层上。 第一底部阻挡层形成在第一功函数金属上。 第二功能金属形成在第一底部阻挡层上。 第一顶部阻挡层形成在第二功函数金属上。