公开(公告)号：US10276476B1

公开(公告)日：2019-04-30

申请号：US15981955

申请日：2018-05-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Xiang Li ,  Ding-Lung Chen ,  En-Feng Liu ,  Yu-Cheng Tung

IPC: H01L23/48 ,  H01L23/52 ,  H01L27/12 ,  H01L29/786 ,  H01L23/522 ,  H01L21/768 ,  H01L29/66 ,  H01L29/40 ,  H01L23/532

Abstract: A semiconductor device and a method of forming the semiconductor device are provided. The semiconductor device includes a substrate, an interconnection structure, an oxide semiconductor (OS) transistor and a contact structure. The substrate has a first surface and a second surface opposite to the first surface. The interconnection structure is disposed on the first surface, and the oxide semiconductor (OS) transistor is disposed on the second surface. Also, the OS transistor includes a back gate disposed on the second surface of the substrate. The contact structure is formed between the OS transistor and the interconnection structure, and the contact structure is electrically connected to the back gate. The contact structure penetrates through the substrate for electrically connecting the interconnection structure to the OS transistor.

公开(公告)号：US10147614B1

公开(公告)日：2018-12-04

申请号：US15865162

申请日：2018-01-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Xiang Li ,  Shao-Hui Wu ,  Hsiao Yu Chia ,  Yu-Cheng Tung

IPC: H01L21/441 ,  H01L21/304 ,  H01L21/768 ,  H01L29/66 ,  H01L29/24 ,  H01L29/78 ,  H01L23/00 ,  H01L29/786

Abstract: A method of manufacturing an oxide semiconductor transistor is provided in the present invention, which includes the step of providing an oxide semiconductor transistor on the front side of a substrate, attaching a wafer on the front side of the substrate, forming a contact hole extending from the back side of the substrate to the oxide semiconductor layer of the oxide semiconductor transistor, and filling the contact hole with metal material to form a back gate of the oxide semiconductor transistor.