公开(公告)号：US20240407273A1

公开(公告)日：2024-12-05

申请号：US18218602

申请日：2023-07-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wen-Jen Wang ,  Hsiang-Hung Peng ,  Yu-Huan Yeh ,  Chuan-Fu Wang

IPC: H10N70/00 ,  H10B63/00 ,  H10N70/20

Abstract: A resistive memory device includes a first dielectric layer, a via connection structure, and a resistive switching element. The via connection structure is disposed in the first dielectric layer, and the resistive switching element is disposed on the via connection structure and the first dielectric layer. The resistive switching element includes a titanium bottom electrode, a titanium top electrode, and a variable resistance material. The titanium top electrode is disposed above the titanium bottom electrode, and the variable resistance material is sandwiched between the titanium bottom electrode and the titanium top electrode in a vertical direction. The variable resistance material is directly connected with the titanium bottom electrode and the titanium top electrode, and the titanium bottom electrode is directly connected with the via connection structure.

公开(公告)号：US20240107902A1

公开(公告)日：2024-03-28

申请号：US17970560

申请日：2022-10-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wen-Jen Wang ,  Yu-Huan Yeh ,  Chuan-Fu Wang

IPC: H01L45/00 ,  H01L23/48 ,  H01L27/24

CPC classification number: H01L45/1253 ,  H01L23/481 ,  H01L27/24 ,  H01L45/1666

Abstract: A resistive memory device includes a dielectric layer, a via connection structure, a stacked structure, and an insulating structure. The via connection structure is disposed in the dielectric layer. The stacked structure is disposed on the via connection structure and the dielectric layer. The insulating structure penetrates through the stacked structure in a vertical direction and divides the stacked structure into a first memory cell unit and a second memory cell unit. The first memory cell unit includes a first bottom electrode, and the second memory cell unit includes a second bottom electrode separated from the first bottom electrode by the insulating structure. The via connection structure is electrically connected with the first bottom electrode and the second bottom electrode.