公开(公告)号：US20210134967A1

公开(公告)日：2021-05-06

申请号：US16670870

申请日：2019-10-31

Applicant: United Microelectronics Corp.

Inventor： Chih-Jung Chen ,  Yu-Jen Yeh

IPC: H01L21/28 ,  H01L29/788 ,  H01L21/762 ,  H01L29/66

Abstract: A structure of flash memory cell includes a substrate. A floating gate is disposed on the substrate. A low dielectric constant (low-K) spacer is disposed on a sidewall of the floating gate. A trench isolation structure has a base part disposed in the substrate and a protruding part above the substrate protruding from the base part. The low-K spacer is sandwiched between the floating gate and the protruding part of the trench isolation structure.