公开(公告)号：US20180061752A1

公开(公告)日：2018-03-01

申请号：US15271221

申请日：2016-09-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Che Huang ,  Ching-Li Yang ,  Yu-Cheng Tung ,  Yu-Tsung Lai ,  Chih-Sheng Chang

IPC: H01L23/522 ,  H01L23/528 ,  H01L49/02 ,  H01L23/532 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L23/5223 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5283 ,  H01L23/53214 ,  H01L23/53257 ,  H01L23/53295 ,  H01L28/60

Abstract: A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a capacitor is formed on the substrate and a hard mask on the capacitor, in which the capacitor includes a bottom electrode, a capacitor dielectric layer, and a top electrode. Next, a protective layer is formed on the sidewalls of the top electrode and the bottom electrode, in which the protective layer includes metal oxide.

公开(公告)号：US09773860B1

公开(公告)日：2017-09-26

申请号：US15257930

申请日：2016-09-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Tsung Lai ,  Ching-Li Yang ,  Yu-Cheng Tung ,  Shih-Che Huang ,  Chih-Sheng Chang

IPC: H01L49/02

CPC classification number: H01L28/60

Abstract: A method for fabricating a capacitor is disclosed. First, a substrate is provided, a bottom electrode and a capacitor dielectric layer are formed on the substrate, a conductive layer is formed on the capacitor dielectric layer, a patterned hard mask is formed on the conductive layer, a patterned hard mask is used to remove part of the conductive layer to form a top electrode, the patterned hard mask is removed, and a protective layer is formed on a top surface and sidewalls of top electrode. Preferably, the protective layer includes metal oxides.