公开(公告)号：US20240282709A1

公开(公告)日：2024-08-22

申请号：US18112564

申请日：2023-02-22

Applicant: Applied Materials, Inc.

Inventor： Zhaoxuan WANG ,  Jianxin LEI ,  Wenting HOU ,  David Maxwell GAGE ,  Zihao HE

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768

CPC classification number: H01L23/53266 ,  H01L21/0217 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02381 ,  H01L21/02414 ,  H01L21/02631 ,  H01L21/32051 ,  H01L21/3212 ,  H01L21/76834 ,  H01L21/7684 ,  H01L23/5329

Abstract: A method to produce a layered substrate includes depositing a ruthenium layer having a first average grain size on a substrate; annealing the substrate at a temperature and for a period of time sufficient to produce an annealed ruthenium layer having a second average grain size which is greater than the first average grain size; and removing a portion of the ruthenium layer by chemical mechanical planarization to form a planarized ruthenium layer, to produce the layered substrate. A layered substrate is also disclosed.

公开(公告)号：US20240243010A1

公开(公告)日：2024-07-18

申请号：US18403204

申请日：2024-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIHYUN LEE ,  EUN HYEA KO ,  SOYOUNG LEE ,  THANH CUONG NGUYEN ,  HOON HAN ,  BYUNGKEUN HWANG ,  HIROYUKI UCHIUZOU ,  KIYOSHI MURATA ,  TOMOHARU YOSHINO ,  YOUNJOUNG CHO

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/76831 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/76844

Abstract: An inhibitor for selectively depositing a thin film may include a compound represented by Formula 1 below:




where, R1 is an aldehyde group, an amino group, a carbonyl group, a ketone group, a nitrile group, an acyl halide group, a substituted or unsubstituted C2 to C20 alkenyl group, or a substituted or unsubstituted C2 to C20 alkynyl group, R2 is a halogen atom, a substituted or unsubstituted C1 to C10 alkylhalide group, a substituted or unsubstituted C4 to C10 tertiary alkyl group, or a substituted or unsubstituted C1 to C10 alkylthio group, and n is an integer from 1 to 5. The inhibitor is adsorbed to a surface of a first layer but not adsorbed to a surface of a second layer. The first layer may include a metal-based material, and the second layer is different from the first layer and may include an insulating material.

公开(公告)号：US11984315B2

公开(公告)日：2024-05-14

申请号：US17227905

申请日：2021-04-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Marcus Johannes Henricus van Dal ,  Peter Ramvall

IPC: H01L29/00 ,  H01L21/02 ,  H01L27/12 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L21/02181 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02483 ,  H01L21/02614 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/786

Abstract: Structures and methods of forming the same are provided. A structure according to the present disclosure includes an interconnect structure, an aluminum oxide layer over the interconnect structure, and a transistor formed over the aluminum oxide layer. The transistor includes cuprous oxide.

公开(公告)号：US11923192B2

公开(公告)日：2024-03-05

申请号：US17943336

申请日：2022-09-13

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Delphine Longrie ,  Peng-Fu Hsu

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192

Abstract: A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US11851749B2

公开(公告)日：2023-12-26

申请号：US17826809

申请日：2022-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jen-Chun Wang ,  Ya-Lien Lee ,  Chih-Chien Chi ,  Hung-Wen Su

IPC: C23C14/35 ,  H01L21/768 ,  H01J37/34 ,  C23C14/00 ,  C23C16/34 ,  C23C16/455 ,  C23C14/06 ,  C23C14/22 ,  H01L21/02 ,  H01L21/67 ,  C23C14/34 ,  H01L21/285 ,  C23C14/04 ,  C23C16/04 ,  H01L21/3205 ,  H01L23/532

CPC classification number: C23C14/35 ,  C23C14/0036 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/225 ,  C23C14/3492 ,  C23C14/358 ,  C23C16/045 ,  C23C16/34 ,  C23C16/45525 ,  H01J37/3405 ,  H01J37/3458 ,  H01L21/02183 ,  H01L21/02266 ,  H01L21/2855 ,  H01L21/67253 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/28568 ,  H01L21/32051 ,  H01L23/53238

Abstract: A semiconductor device is manufactured by modifying an electromagnetic field within a deposition chamber. In embodiments in which the deposition process is a sputtering process, the electromagnetic field may be modified by adjusting a distance between a first coil and a mounting platform. In other embodiments, the electromagnetic field may be adjusted by applying or removing power from additional coils that are also present.

公开(公告)号：US20230366080A1

公开(公告)日：2023-11-16

申请号：US18044562

申请日：2021-07-08

Applicant: EGTM Co., Ltd.

Inventor： Jae Min KIM ,  Ha Na KIM ,  Woong Jin CHOI

IPC: C23C16/04 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455

CPC classification number: C23C16/04 ,  H01L21/02312 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02189 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/0228 ,  C23C16/405 ,  C23C16/45534

Abstract: Disclosed is a method of forming an area-selective thin film, the method comprising supplying the selectivity material to the inside of the chamber in which the substrate is placed, so that the selectivity material is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.

公开(公告)号：US20190019682A1

公开(公告)日：2019-01-17

申请号：US15647495

申请日：2017-07-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Rohit Galatage ,  Shariq Siddiqui ,  Chung-Ju Yang

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/311 ,  H01L29/51

CPC classification number: H01L21/28211 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02362 ,  H01L21/28185 ,  H01L21/31111 ,  H01L29/517 ,  H01L29/78

Abstract: Structures for reliability caps used in the manufacture of a field-effect transistor and methods for forming reliability caps used in the manufacture of a field-effect transistor. A layer comprised of a metal silicon nitride is deposited on a high-k dielectric material. The high-k dielectric material is thermally processed in an oxygen-containing ambient environment with the layer arranged as a cap between the high-k dielectric material and the ambient environment. Due at least in part to its composition, the layer blocks transport of oxygen from the ambient environment to the high-k dielectric material.

公开(公告)号：US10035388B2

公开(公告)日：2018-07-31

申请号：US15460293

申请日：2017-03-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mayumi Yamaguchi ,  Konami Izumi ,  Fuminori Tateishi

IPC: H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  B60C23/04 ,  B60C23/20 ,  B81C1/00 ,  H01L41/25 ,  H01L27/20 ,  H01L41/311 ,  H01L41/313

CPC classification number: B60C23/0493 ,  A61B5/02444 ,  A61B5/681 ,  B60C23/04 ,  B60C23/0408 ,  B60C23/0411 ,  B60C23/0413 ,  B60C23/20 ,  B81C1/0023 ,  G01L1/16 ,  G01L17/00 ,  H01L21/02118 ,  H01L21/02175 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/54 ,  H01L24/93 ,  H01L27/20 ,  H01L35/34 ,  H01L41/25 ,  H01L41/311 ,  H01L41/313 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  Y10T29/42 ,  H01L2924/00

Abstract: The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.

公开(公告)号：US20180197940A1

公开(公告)日：2018-07-12

申请号：US15814057

申请日：2017-11-15

Applicant: International Business Machines Corporation

Inventor： Daniel C. Edelstein ,  Chih-Chao Yang

IPC: H01L49/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/02 ,  H01L21/321 ,  H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01C7/00 ,  H01C17/075

CPC classification number: H01L28/24 ,  H01C7/006 ,  H01C17/075 ,  H01L21/02183 ,  H01L21/32051 ,  H01L21/321 ,  H01L21/76802 ,  H01L21/76823 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/5228 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329

Abstract: The present application provides planar and stacked resistor structures that are embedded within an interconnect dielectric material in which the resistivity of an electrical conducting resistive material or electrical conducting resistive materials of the resistor structure can be tuned to a desired resistivity during the manufacturing of the resistor structure. Notably, a doped metallic insulator layer is formed atop a substrate. A controlled surface treatment process is then performed to an upper portion of the doped metallic insulator layer to convert the upper portion of the doped metallic insulator layer into an electrical conducting resistive material layer. The remaining doped metallic insulator layer and the electrical conducting resistive material layer are then patterned to provide the resistor structure.

公开(公告)号：US10017856B1

公开(公告)日：2018-07-10

申请号：US15489242

申请日：2017-04-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Darshan Thakare ,  Abhijit Basu Mallick ,  Pramit Manna ,  Robert Jan Visser ,  Prerna Sonthalia Goradia ,  Nilesh Chimanrao Bagul

IPC: H01L21/02 ,  C23C16/448 ,  C23C16/40 ,  C23C16/34

CPC classification number: C23C16/4486 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  H01L21/02153 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02271

Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.