公开(公告)号：US20220320147A1

公开(公告)日：2022-10-06

申请号：US17844067

申请日：2022-06-20

Applicant: United Microelectronics Corp.

Inventor： Sheng-Yao Huang ,  Yu-Ruei Chen ,  Chung-Liang Chu ,  Zen-Jay Tsai ,  Yu-Hsiang Lin

IPC: H01L27/12 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78

Abstract: A fin transistor structure is provided. The fin transistor structure includes a first substrate. An insulation layer is disposed on the first substrate. A plurality of fin structures are disposed on the insulation layer. A supporting dielectric layer fixes the fin structures at the fin structures at waist parts thereof. A gate structure layer is disposed on the supporting dielectric layer and covers a portion of the fin structures.

公开(公告)号：US11417685B2

公开(公告)日：2022-08-16

申请号：US16699474

申请日：2019-11-29

Applicant: United Microelectronics Corp.

Inventor： Sheng-Yao Huang ,  Yu-Ruei Chen ,  Chung-Liang Chu ,  Zen-Jay Tsai ,  Yu-Hsiang Lin

IPC: H01L27/12 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78

Abstract: A fin transistor structure is provided. The fin transistor structure includes a first substrate. An insulation layer is disposed on the first substrate. A plurality of fin structures are disposed on the insulation layer. A supporting dielectric layer fixes the fin structures at the fin structures at waist parts thereof. A gate structure layer is disposed on the supporting dielectric layer and covers a portion of the fin structures.